Taiwan Semiconductor Corporation 정류기-싱글
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필터보기
필터 재설정
필터 적용
카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Taiwan Semiconductor Corporation
기록 5,388
페이지 43/180
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A DO214AC |
4,680 |
|
Automotive, AEC-Q101 | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 500MA SUBSMA |
4,932 |
|
- | Standard | 800V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A DO204AL |
7,956 |
|
Automotive, AEC-Q101 | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1A DO204AL |
2,556 |
|
Automotive, AEC-Q101 | Standard | - | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 1A SUB SMA |
7,056 |
|
- | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 1A SUB SMA |
5,022 |
|
- | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO204AL |
6,714 |
|
- | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A DO204AL |
3,564 |
|
- | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO204AL |
5,598 |
|
- | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO204AL |
2,304 |
|
- | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A DO204AL |
6,264 |
|
- | Standard | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A SUB SMA |
8,640 |
|
- | Standard | 50V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
2,826 |
|
- | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SUB SMA |
2,088 |
|
- | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 1A SUB SMA |
3,726 |
|
- | Standard | 300V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 20pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A SUB SMA |
5,274 |
|
- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 20pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SUB SMA |
2,808 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 500MA SUBSMA |
2,214 |
|
Automotive, AEC-Q101 | Standard | 100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A DO214AC |
6,066 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 800V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A DO214AC |
7,524 |
|
Automotive, AEC-Q101 | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 800V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1000V 1A DO214AC |
2,502 |
|
Automotive, AEC-Q101 | Standard | - | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 1000V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 500MA SOD123F |
6,102 |
|
- | Schottky | 20V | 500mA | 385mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 20V | - | Surface Mount | SOD-123F | SOD-123F | -65°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 500MA SOD123F |
4,086 |
|
- | Schottky | 30V | 500mA | 500mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 130µA @ 30V | - | Surface Mount | SOD-123F | SOD-123F | -65°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 500MA SOD123F |
6,048 |
|
- | Schottky | 40V | 500mA | 510mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 40V | - | Surface Mount | SOD-123F | SOD-123F | -65°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A TS-1 |
8,874 |
|
Automotive, AEC-Q101 | Schottky | 20V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A TS-1 |
2,862 |
|
Automotive, AEC-Q101 | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 1A TS-1 |
5,148 |
|
Automotive, AEC-Q101 | Schottky | 50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A TS-1 |
8,370 |
|
Automotive, AEC-Q101 | Schottky | 20V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A TS-1 |
8,190 |
|
Automotive, AEC-Q101 | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 1A TS-1 |
3,330 |
|
Automotive, AEC-Q101 | Schottky | 50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |