Taiwan Semiconductor Corporation 정류기-싱글

시리즈

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다이오드 유형

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전압-DC 역방향 (Vr) (최대)

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전류-평균 정류 (Io)

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전압-순방향 (Vf) (최대) @ If

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속도

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역 복구 시간 (trr)

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전류-역방향 누설 @ Vr

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커패시턴스 @ Vr, F

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장착 유형

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패키지 / 케이스

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공급자 장치 패키지

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작동 온도-접합

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필터보기

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필터 적용

카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글

제조업체Taiwan Semiconductor Corporation

기록 5,388

페이지 53/180

부품 번호	제조업체	설명	재고 있음	시리즈	다이오드 유형	전압-DC 역방향 (Vr) (최대)	전류-평균 정류 (Io)	전압-순방향 (Vf) (최대) @ If	속도	역 복구 시간 (trr)	전류-역방향 누설 @ Vr	커패시턴스 @ Vr, F	장착 유형	패키지 / 케이스	공급자 장치 패키지	작동 온도-접합
ES1J M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	3,924	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	18pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS110LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	6,624	Automotive, AEC-Q101	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS110LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	5,094	Automotive, AEC-Q101	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS115LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SUB SMA	7,128	Automotive, AEC-Q101	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS115LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SUB SMA	8,910	Automotive, AEC-Q101	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	8,316	Automotive, AEC-Q101	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	8,208	Automotive, AEC-Q101	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SFT11G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	2,790	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
ESDLW RQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	4,590	-	Standard	200V	800mA	950mV @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	21pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESDLWHRQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	5,112	Automotive, AEC-Q101	Standard	200V	800mA	950mV @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	21pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESGLW RQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	3,544	-	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESGLWHRQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	6,156	Automotive, AEC-Q101	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESJLW RQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	3,582	-	Standard	600V	800mA	1.7V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	19pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESJLWHRQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	4,194	Automotive, AEC-Q101	Standard	600V	800mA	1.7V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	19pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
SFT11GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	8,532	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT12GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	6,264	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT13GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A TS-1	3,580	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT14GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	7,524	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
ES1ALHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	2,376	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	7,326	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	5,148	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF11GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7,074	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF12GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	8,136	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF13GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO204AL	5,688	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF14GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	4,554	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR010HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 500MA DO204	3,564	Automotive, AEC-Q101	Schottky	100V	500mA	850mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	65pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	8,118	Automotive, AEC-Q101	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1JHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	5,292	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1M R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	5,328	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR220HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 2A DO204AC	6,300	Automotive, AEC-Q101	Schottky	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C

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