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Taiwan Semiconductor Corporation 정류기-싱글

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Taiwan Semiconductor Corporation
기록 5,388
페이지 63/180
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
SF26GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
3,780
Automotive, AEC-Q101
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
US1MHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO214AC
8,424
Automotive, AEC-Q101
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1FLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
7,578
Automotive, AEC-Q101
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
MUR105S M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AA
8,820
-
Standard
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
MUR110S M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AA
5,598
-
Standard
100V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
MUR115S M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AA
2,664
-
Standard
150V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 150V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
MUR120S M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AA
4,032
-
Standard
200V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 200V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
MUR140S M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AA
3,996
-
Standard
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
150µA @ 400V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
MUR160S M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
2,412
-
Standard
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
150µA @ 600V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
SS215L R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A SUB SMA
7,488
-
Schottky
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SF27G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 2A DO204AC
7,434
-
Standard
500V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF27GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 2A DO204AC
8,496
Automotive, AEC-Q101
Standard
500V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF28G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
2,682
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF28GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
8,550
Automotive, AEC-Q101
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
RS2KAHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO214AC
8,730
-
Standard
800V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2MAHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1.5A DO214AC
6,480
-
Standard
1000V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS22 M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 2A DO214AA
3,222
-
Schottky
20V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SS22HM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 2A DO214AA
4,680
Automotive, AEC-Q101
Schottky
20V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SS23 M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 2A DO214AA
6,048
-
Schottky
30V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SS23HM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 2A DO214AA
6,498
Automotive, AEC-Q101
Schottky
30V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SS24 M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 2A DO214AA
8,622
-
Schottky
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SS24HM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 2A DO214AA
6,156
Automotive, AEC-Q101
Schottky
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SS25 M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 2A DO214AA
7,182
-
Schottky
50V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS25HM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 2A DO214AA
3,528
Automotive, AEC-Q101
Schottky
50V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS26 M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 2A DO214AA
6,984
-
Schottky
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS26HM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 2A DO214AA
7,326
Automotive, AEC-Q101
Schottky
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
MUR160A R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
3,690
-
Standard
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
27pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
1N5404G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
3,726
-
Standard
400V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF27G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 2A DO204AC
6,300
-
Standard
500V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF27G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 2A DO204AC
2,376
-
Standard
500V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C