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Cypress introduces 4Mb device with on-chip error correction code

2월 14 2019 2019-02 Semiconductors Cypress Semiconductor
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Cypress Semiconductor, the market leader in static random access memory (SRAM), has announced that its 4Mb asynchronous SRAM with error correction code (ECC) is being sampled. The on-chip ECC capabilities of these new SRams provide the highest level of data reliability without the need for additional error correction chips, simplifying design and reducing board size.

     Cypress Semiconductor, the market leader in static random access memory (SRAM), has announced that its 4Mb asynchronous SRAM with error correction code (ECC) is being sampled. The on-chip ECC capabilities of these new SRams provide the highest level of data reliability without the need for additional error correction chips, simplifying design and reducing board size. The device ensures data reliability in industrial, military, communications, data processing, medical, consumer and automotive applications.

     Soft errors caused by background radiation can corrupt the contents of memory, resulting in the loss of important data. The hardware ECC module in Cypress's new asynchronous SRAM family performs all error correction functions online without user intervention, achieving the industry's best soft error rate (SER) performance of less than 0.1 FIT/Mb (one FIT equals one error per billion hours of operation of the device). These new devices are compatible with existing fast asynchronous and low-power SRAM pins, allowing customers to improve system reliability without changing the board design. These 4Mb Srams also have optional error indication signals that indicate single-bit error correction.

     Sunil Thamaran, Senior Director, Asynchronous SRAM Business Unit, Cypress, said: "Last year we launched the first 16Mb asynchronous SRAM with ECC on chip, and customer response has been overwhelming. Adding a product with a different capacity enables ECC technology to benefit more applications. Cypress is constantly working to develop new SRAM technologies to better serve our customers, while strengthening our unassailable leadership position in the market."

     The Cypress 4Mb Asynchronous SRAM is available in three options - a fast 4Mb SRAM, a MoBL(longer battery life)4Mb SRAM, and a Fast 4Mb SRAM with PowerSnooze™ function (with an additional Deep Sleep saving mode with a maximum current of only 15 uA). Each is available in the industry standard x8 or x16 configuration. These devices operate at a variety of voltages (1.8V, 3V, and 5V) with temperatures ranging from -40°C to +85°C(industrial grade) and -40°C to +125°C(automotive E-class).

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