Diodes Micro FET saves up to 40% space

     Diodes Incorporated expands its portfolio of ultra-small discrete devices for space-demanding product designs. The three new small-signal MOSFETs include N-channel transistors rated at 20V and 30V, and P-channel devices rated at 30V, all in the DFN0606 miniature package. Each device has a board space of just 0.6mm x 0.6mm, which is 40% smaller than MOSFETs typically packaged in DFN1006 (SOT883), making it ideal for the next generation of wearable technology products, tablets and smartphones.

     The DMN2990UFZ (20V nMOS channel), DMN31D5UFZ (30V nMOS channel) and DMP32D9UFZ (30V pMOS channel) provide electrical performance equal to or better than most large package devices. The new products are designed to minimize on-resistance while maintaining superior switching performance.

     In addition, the typical threshold voltage of the device is less than 1V, and this low opening voltage is suitable for single-cell operation mode. The new miniature MOSFETs are ideal for efficient power management and also serve as universal interfaces and simple analog switches. These DFN0606 packaged devices consume up to 300mW of power, enabling an increase in circuit power density.