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Diodes introduces automotive compliant Silicon Carbide MOSFET products

7월 21 2023 2023-07 Semiconductors Diodes Incorporated
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Diodes announced the introduction of the DMWSH120H90SM4Q and DMWSH120H28SM4Q automotive specification-compliant Silicon carbide (SiC) MOSFETs, further strengthening its Wide-Bandgap product lineup. This series of N-channel MOSFETs meets the growing demand for SiC solutions that improve the efficiency and power density of vehicle subsystems for electric and hybrid electric vehicles (EV/HEV). Examples include battery chargers, on-board chargers (OBCs), high efficiency DC-DC converters, motor drivers and traction converters.

     Diodes announced the introduction of the DMWSH120H90SM4Q and DMWSH120H28SM4Q automotive specification-compliant Silicon carbide (SiC) MOSFETs, further strengthening its Wide-Bandgap product lineup. This series of N-channel MOSFETs meets the growing demand for SiC solutions that improve the efficiency and power density of vehicle subsystems for electric and hybrid electric vehicles (EV/HEV). Examples include battery chargers, on-board chargers (OBCs), high efficiency DC-DC converters, motor drivers and traction converters.

     Both DMWSH120H90SM4Q and DMWSH120 H28SM4Q are AEC-Q101 compliant, manufactured in IATF 16949-certified facilities, and support PPAP documentation. The DMWSH120H90SM4Q operates safely and reliably up to 1200VDS with a Gate-Source voltage (Vgs) of +15/-4V and an RDS(ON) specification of 75mΩ (typical value) at 15Vgs. This device is suitable for OBC, automotive motor drives, DC-DC converters in EV/HEV, and battery charging systems.

     The DMWSH120H28SM4Q operates at up to 1200VDS, +15/-4Vgs, and has a low 20mΩ (typical value) RDS(ON) at 15Vgs. The MOSFET is suitable for motor drivers, EV traction converters and DC-DC converters in other EV/HEV subsystems. With low RDS(ON), this series of MOSFETs can operate at lower temperatures in product applications requiring high power density.

     Both products have low thermal conductivity (RθJC=0.6°C/W) and Drain current up to 40A for the DMWSH120H90SM4Q and 100A for the DMWSH120H28SM4Q. This series also has built in fast and robust Body Diodes with low reverse recovery charge (Qrr) of 108.52nC in the DMWSH120H90SM4Q and 317.93nC in the DMWSH120H28SM4Q, so it can perform fast switching. At the same time reduce power loss.

     Diodes has developed a new MOSFET with flat manufacturing technology that delivers robust and reliable performance in automotive applications, improving drain current, Breakdown voltage, junction temperature and power toroidal circuits over previously released versions. This family of devices is available in a TO247-4 (WH type) package with additional Kelvin sensing pins. It can be connected to the source to optimize switching efficiency and achieve higher power density.

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