Diodes release new silicon carbide Schottky barrier diodes

     Diodes Incorporated released its first SiC SBD. The product portfolio includes the DIODES DSCxxA065 series with 11 products rated at 650V (4A, 6A, 8A and 10A) and the DIODES DSCxx120 series with 8 products rated at 1200V (2A, 5A and 10A). These wide-gap SDDS offer the benefits of greatly increased efficiency and high temperature reliability, while also meeting the market demand for smaller system operating costs and low maintenance. Three package options include surface mount TO252-2 (WX model), through-hole TO220AC (WX model), and ITO220AC (WX-NC model).

     The device is suitable for AC/DC, DC-DC and DC/AC switching converters, photovoltaic inverters, UPS and industrial motor drive applications. These devices can also be used in a variety of other circuits, such as boost converters for power factor correction. These SiC devices are highly efficient compared to traditional silicon-based products, providing power designers with an uncompromising product performance advantage.

     Due to low capacitive charge (QC), they provide negligible switching losses, thus providing high efficiency in fast switching applications. This is ideal for circuit designs with higher power densities and smaller overall solution sizes. Low forward voltage (VF) further improves efficiency, reducing power losses and operating costs. The reduced heat dissipation helps reduce the overall system cooling budget. High surge current capability enhances system reliability, while excellent thermal performance reduces construction costs.