EPC Power Conversion Corporation introduces the ideal device for Class D audio amplifiers

     EPC2106, a single-chip half-bridge enhanced gallium nitride transistor, has been announced by EPC2106. By integrating two eGaN® power field effect transistors into one integrated circuit, mutual inductance and the required gap space between the devices on the PCB can be removed, thereby increasing efficiency (especially at higher frequencies) and increasing power density while reducing the assembly cost of the power conversion system for the end user.

     The EPC2106 is A half-bridge element with a rated voltage of 100 V, a typical RDS(on) value of 55 mΩ, an output capacitance of less than 600 pF, zero reverse recovery (QRR), and a maximum pulse drain current of 18 A. Due to the low on-resistance and capacitance of gallium nitride components, high efficiency and greatly reduced distortion in Class D audio systems can be achieved. The EPC2106 features an ultra-small chip package (1.35mm X 1.35mm) that improves switching speed and heat dissipation performance, thereby increasing power density.

     Gallium nitride components have low on-resistance and capacitance to achieve high efficiency and greatly reduce distortion in Class D systems. Reference design for Class D audio amplifiers EPC9106 uses gallium nitride power transistors with high frequency switching properties at the power level to accurately reproduce Class D audio signals at high power. Systems based on gallium nitride transistors demonstrate their high efficiency, reduced size and the need for no heat cooler while providing the sound quality of professional and consumer audio products.

     The EPC9055 is a 2 "by 1.5" development board that contains an EPC2106 half-bridge integrated circuit and uses Texas Instruments LM5113 gate driver, power supply, and bypass capacitor. This development board contains all the important components, and the layout of the board allows for optimal switching performance, making it easy for designers to evaluate gallium nitride field effect transistors to take advantage of gallium nitride devices in their systems.