Littelfuse's first silicon carbide MOSFETs enable ultra-fast switching

    Littelfuse announced the launch of its first silicon carbide (SiC) MOSFET product family, the latest in the company's expanding portfolio of power semiconductors. In March, Lttelfuse took another firm step toward becoming a leader in the power Semiconductor industry by investing in Monolith Semiconductor Inc., a prestigious silicon carbide technology developer. The LSIC1MO120E0080 series, with a 1200V power rating and ultra-low on-resistance (80mQ), is the first silicon carbide MOSFET designed, developed and produced in-house. Optimized for high frequency switching applications ultra-low switching losses and ultra-high switching speeds leave conventional power transistors behind.

     Compared to silicon devices with the same rating, the silicon carbide MOSFETs are more energy efficient, the system size/weight is reduced, and the power density in power electronics systems is increased. Excellent durability and performance even at high temperatures (150°C).

     Typical applications for new SIC MOSFE products include power conversion systems such as solar inverters, switching mode power devices, UPS systems, motor drivers, high voltage DC/DC inverters, battery chargers, and induction heating.

     "The new silicon carbide MOSFET family is an important milestone, marking another step towards becoming a leading component supplier for power semiconductors." Littelfuse according to Michael Ketterer, Power Semiconductor Product Marketing, Electronics Business Unit, "Our silicon carbide MOSFET application support network is ready to help customers improve the performance of existing designs and develop new power conversion products."