Power Master Semiconductor introduces the second generation 1200V eSiC MOSFETs

     Power Master Semiconductor has introduced its second generation 1200V eSiC MOSFETs to meet the demand for higher efficiency, high power density, high reliability and durability in a range of applications, including DC EV charging stations, solar inverters, energy storage systems (ESS), motor drives and industrial power supplies.

     The 1200V eSiC MOSFETs offer significant advantages to the system, including increased power density, improved efficiency, and reduced cooling requirements due to their significant reduction in power losses. SiC MOSFETs are becoming increasingly popular, especially for renewable energy systems and electric vehicle charging systems that require higher power density, efficiency, and resiliency. The DC electric vehicle charging station is a level 3 charger that increases the power level through a modular structure to meet the needs of electric vehicles for faster charging time and greater battery capacity. Dc EV charging provides a consistent current output covering a wide range of DC output voltages (200V to 900V) and load profiles.

     Compared to the previous generation, the second-generation 1200V eSiC MOSFETs have a 30% improvement in key performance indicators (FOM), including gate charge (QG), energy stored in output capacitors (EOSS), reverse recovery charge (QRR), and output charge (QOSS). The latest SiC MOSFET technology has significant advantages in power conversion applications, including reduced power losses, resulting in smaller, lighter, and more efficient systems that require less cooling.

     The 1200V eSiC MOSFET Gen2 offers superior switching performance and has been thoroughly tested for its avalanche capability. By significantly reducing Miller capacitance (QGD), the latest iteration achieves a 44% reduction in switching losses compared to its predecessor.

     Power Master Semiconductor reaffirms its unwavering commitment to advancing state-of-the-art power device solutions, prioritizing efficiency and sustainability. The emergence of this new generation of 1200V e SiC MOSFETs represents a significant advance in creating environmentally friendly and efficient power systems. Power Master Semiconductor expresses strong confidence that the 1200V eSiC Gen2 MOSFETs will have a significant impact on high-performance applications.