STMicroelectronics Class leading 900V MOSFET tube to increase flyback converter output power and energy efficiency

     STMicroelectronics' latest 900V MDmesh K5 overjunction MOSFET tube enables power designers to meet the needs of higher power and more energy efficient systems, with best-in-class on-resistance (RDS(ON)) and dynamic characteristics. The 900V breakdown voltage ensures a higher safety factor for high bus voltage systems. The new series includes the first 900V MOSFET with an RDS(ON) on-resistance of less than 100mΩ, making it the lowest RDS(ON) resistance DPAK product.

     The industry's lowest gate charge (Qg) ensures faster switching speeds and greater configuration flexibility in applications requiring wide input voltages. These features ensure high energy efficiency and reliability of flyback converters ranging from standard quasi-resonant circuits to active clamp designs, covering rated power ranges from as low as 35W to as high as 230W. In addition, the low input-output capacitance (Ciss,Coss) enables zero-voltage switching, minimizing the power loss of the half-bridge LLC resonant converter.

     The high safety factor and excellent dynamic characteristics of the new devices allow designers to improve the performance of a wide range of products, such as server power supplies, three-phase switching power supplies (SMPS), LED lighting power supplies, electric vehicle (EV) chargers, solar panels, welding machines, industrial equipment drive systems and factory automation.

     The STMicroelectronics MDmesh K5 series overjunction transistor has a wide range of products, including 800V, 850V, 900V, 950V, 1050V, 1200V and 1500V rated voltage products. Coupled with flexible package options including TO-220AB, TO-220FP, TO-247, TO-247 long pins, IPAK and I2PAK, as well as D2PAK and DPAK surface power packages, ST offers designers a wide range of superjunction ultra-high voltage (VHV) MOSFETs.