The new N-channel power mosfet supports greater vehicle current

     Toshiba Electronics Europe Ltd. has released two new automotive class 40V n channel power MosFets that provide a real impact on the next generation of automotive design. XPQR3004PB and XPQ1R004PB use the game-changing big transistor outline Gull-wing lead package format - called L-TOGL. Due to its L-TOGL package and enhanced heat dissipation characteristics, the newly released MOSFeTs are highly optimized for managing high currents.

     They both offer high drain current ratings (400A for XPQR3004PB and 200A for XPQ1R004PB) and industry-leading on-conduction resistance values (0.3mOhm for XPQR3004PB and 1mOhm for XPQ1R004PB). There is no internal column structure (solder joint) on these products, this is achieved by connecting the source to the external lead with an invented copper clip.

     The multi-pin structure of the source leads reduces package resistance (and associated losses) by approximately 70% compared TO existing TO-220SM(W) packages. The resulting XPQR3004PB drain current (ID) rating represents a 60% increase over the TKR74F04PB currently installed in the TO-220SM(W) package. In addition, the thick copper frame greatly reduces the thermal impedance connected to the housing. The value of XPQR3004PB is 0.2C/W, and the value of XPQ1R004PB is 0.65C/W. This reduces heat dissipation, lowers operating temperature and improves reliability.

     The equipment is AEC-Q101 certified for harsh automotive applications with temperatures up to 175℃. Their gull wing leads reduce mounting stress and allow for easy visual inspection, thus improving solder joint reliability. When used in high-current automotive applications, such as semiconductor relays or integrated starter generators, the device allows for simplified design and requires fewer MOSFeTs. This shows that reductions in size, weight and cost are achievable.