Vishay Semiconductor Diodes Division 정류기-싱글
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
필터보기
필터 재설정
필터 적용
카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Vishay Semiconductor Diodes Division
기록 11,281
페이지 146/377
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
3,420 |
|
- | Avalanche | 200V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 8A DO221BC |
4,392 |
|
eSMP®, TMBS® | Schottky | 150V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 150V | 510pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 8A DO221BC |
3,186 |
|
eSMP®, TMBS® | Schottky | 60V | 8A | 630mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 60V | 1030pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A DO221BC |
3,726 |
|
eSMP®, TMBS® | Schottky | 100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 810pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 8A DO221BC |
5,634 |
|
eSMP®, TMBS® | Schottky | 120V | 8A | 880mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 120V | 730pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1A DO220AA |
6,966 |
|
eSMP® | Avalanche | 200V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 200V | 12.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1A DO220AA |
2,376 |
|
eSMP® | Avalanche | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 400V | 12.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1A DO220AA |
4,932 |
|
eSMP® | Avalanche | 600V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 600V | 12.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1A DO220AA |
3,942 |
|
eSMP® | Avalanche | 200V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 200V | 11pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1A DO220AA |
8,946 |
|
eSMP® | Avalanche | 400V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 400V | 11pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1A DO220AA |
4,698 |
|
eSMP® | Avalanche | 600V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 600V | 11pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
4,086 |
|
- | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A DO201AD |
2,160 |
|
- | Schottky | 60V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 4A DO201AD |
8,802 |
|
- | Standard | 50V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A DO201AD |
5,328 |
|
- | Standard | 100V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 4A DO201AD |
3,024 |
|
- | Standard | 150V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
4,680 |
|
- | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 4A DO201AD |
2,232 |
|
- | Standard | 50V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A DO201AD |
7,398 |
|
- | Standard | 100V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 4A DO201AD |
8,334 |
|
- | Standard | 150V | 4A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
5,652 |
|
- | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A |
7,884 |
|
- | Avalanche | 200V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A |
5,958 |
|
- | Avalanche | 400V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 400V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A |
6,606 |
|
- | Avalanche | 600V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 3A DO201AD |
7,200 |
|
- | Schottky | 50V | 3A | 680mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
3,508 |
|
- | Standard | 200V | 2A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
7,650 |
|
- | Standard | 600V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
3,960 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
8,442 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
6,372 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |