Vishay Siliconix 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Vishay Siliconix
기록 3,936
페이지 129/132
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 60V 0.99A TO-205 |
4,212 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 990mA (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD (TO-39) | TO-205AD, TO-39-3 Metal Can |
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Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205 |
4,590 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205 |
3,798 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205 |
3,258 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205 |
5,364 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205 |
6,534 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205 |
4,770 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205 |
3,042 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205 |
7,128 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205 |
3,420 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Vishay Siliconix |
MOSFET P-CH 40V 50MA TO-72 |
8,190 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 50mA (Ta) | 20V | 250Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5pF @ 15V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-72 | TO-206AF, TO-72-4 Metal Can |
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Vishay Siliconix |
MOSFET P-CH 40V 50MA TO-72 |
8,514 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 50mA (Ta) | 20V | 250Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5pF @ 15V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-72 | TO-206AF, TO-72-4 Metal Can |
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Vishay Siliconix |
MOSFET P-CH 40V 50MA TO-72 |
4,914 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 50mA (Ta) | 20V | 250Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5pF @ 15V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-72 | TO-206AF, TO-72-4 Metal Can |
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Vishay Siliconix |
MOSFET P-CH 30V 50MA TO-206AF |
3,384 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 50mA (Ta) | 20V | 300Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5pF @ 15V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-72 | TO-206AF, TO-72-4 Metal Can |
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Vishay Siliconix |
MOSFET N-CH 60V 800MA 4-DIP |
5,058 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7nC @ 10V | ±20V | 200pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 250V 450MA 4-DIP |
3,544 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 450mA (Ta) | - | 2Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | - | 140pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET P-CH 100V 1A 4-DIP |
5,292 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | - | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | - | 390pF @ 25V | - | - | - | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO-247AC |
6,462 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 320mOhm @ 13A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 4000pF @ 25V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 22A TO-247AC |
7,290 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 280mOhm @ 13A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 3570pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 26A TO-247AC |
8,622 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 250mOhm @ 16A, 10V | 5V @ 250µA | 180nC @ 10V | ±30V | 5020pF @ 25V | - | 470W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 38A SUPER247 |
8,658 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 150mOhm @ 23A, 10V | 5V @ 250µA | 320nC @ 10V | ±30V | 7990pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Vishay Siliconix |
MOSFET N-CH 600V 40A SUPER247 |
8,604 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 130mOhm @ 24A, 10V | 5V @ 250µA | 330nC @ 10V | ±30V | 7970pF @ 25V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Vishay Siliconix |
MOSFET N-CH 30V 25A 8-SO |
6,984 |
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SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 5.5mOhm @ 10A, 10V | 2.2V @ 1mA | 43nC @ 10V | ±20V | 1700pF @ 15V | Schottky Diode (Body) | 3W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 1.9A MICROFOOT |
4,608 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | - | 1.8V, 4.5V | 90mOhm @ 1.5A, 4.5V | 900mV @ 250µA | 15nC @ 8V | ±8V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA |
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Vishay Siliconix |
MOSFET N-CH 600V 29A D2PAK |
7,200 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 23A TO-247AD |
6,714 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 2418pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 47A TO-247AD |
6,390 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 47A (Tc) | 10V | 72mOhm @ 24A, 10V | 4V @ 250µA | 273nC @ 10V | ±20V | 5682pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK SO-8 |
4,662 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 2.3V @ 250µA | 38nC @ 10V | ±20V | 1575pF @ 15V | - | 5W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
3,906 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.1mOhm @ 20A, 10V | 2.3V @ 250µA | 86nC @ 10V | ±20V | 3800pF @ 20V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 35A 1212-8 |
7,974 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 5.6mOhm @ 10A, 10V | 2.5V @ 250µA | 35nC @ 10V | ±20V | 1300pF @ 15V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |