Microsemi 정류기-싱글
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필터보기
필터 재설정
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Microsemi Corporation
기록 2,560
페이지 1/86
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microsemi |
DIODE SCHOTTKY 15V 1A DO214BA |
306,126 |
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- | Schottky | 15V | 1A | 220mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | - | Surface Mount | DO-214BA | DO-214BA | -55°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 100V 5A POWERMITE |
51,768 |
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- | Schottky | 100V | 5A | 810mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 150pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 40V 8A POWERMITE3 |
41,856 |
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- | Schottky | 40V | 8A | 450mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
24,036 |
|
- | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 400V 400MA DO35 |
26,898 |
|
- | Standard | 400V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 40A TO247 |
21,996 |
|
- | Standard | 600V | 40A | 2.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 400MA DO35 |
21,960 |
|
- | Standard | 600V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 600V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 200V 120A TO247 |
56,868 |
|
- | Schottky | 200V | 120A | 950mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 2mA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
3,622 |
|
- | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 20V 75MA DO35 |
17,147 |
|
- | Schottky | 20V | 75mA | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 150nA @ 16V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 150V 1A D5A |
7,748 |
|
- | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 300MA D5D |
16,554 |
|
- | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 150V 3A B-MELF |
15,936 |
|
- | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 40V 3A B-MELF |
1,027 |
|
- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
80,832 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
28,122 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 60V 5A POWERMITE3 |
45,540 |
|
- | Schottky | 60V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | 150pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 15V 1A POWERMITE |
22,068 |
|
- | Schottky | 15V | 1A | 220mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | 150pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 800V 1A DO214BA |
22,230 |
|
- | Standard | 800V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 20µA @ 800V | - | Surface Mount | DO-214BA | DO-214BA | -55°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 100V 8A DO214AB |
26,832 |
|
- | Schottky | 100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
33,144 |
|
- | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
15,996 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 30A TO247 |
84,054 |
|
- | Standard | 600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1.2KV 40A TO247 |
12,486 |
|
- | Standard | 1200V | 40A | 3.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 350ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1KV 30A TO247 |
13,938 |
|
- | Standard | 1000V | 30A | 2.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 290ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 60A TO247 |
6,672 |
|
- | Standard | 600V | 60A | 1.8V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
11,028 |
|
- | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
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Microsemi |
DIODE GEN PURP 200V 3A AXIAL |
6,696 |
|
- | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | Axial | B, Axial | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
151 |
|
- | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
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Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
7,488 |
|
- | Standard | 600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 25pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |