트랜지스터-FET, MOSFET-어레이
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-어레이
기록 3,829
페이지 128/128
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | FET 기능 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | 입력 커패시턴스 (Ciss) (최대) @ Vds | 전력-최대 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics America |
MOSFET N-CH DUAL LGA |
4,392 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
MOSFET N-CH DUAL LGA |
4,248 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
MOSFET N-CH DUAL LGA |
5,706 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
MOSFET N-CH SC-88 |
4,770 |
|
- | 2 N-Channel (Dual), Schottky | Logic Level Gate, 4.5V Drive | 60V | 100mA (Ta) | 2.7Ohm @ 100mA, 10V | 2.5V @ 250µA | 2nC @ 10V | 20pF @ 10V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88 |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V SOT-363 |
4,734 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V SOT-363 |
8,784 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V SOT-363 |
2,340 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V SOT-363 |
7,992 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V SOT-363 |
3,436 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH SOT23 |
4,230 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET P-CH SOT23 |
5,472 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
8,226 |
|
- | 2 N-Channel (Dual) | Standard | - | 500mA (Ta) | 4.25Ohm @ 250mA, 10V | 4.9V @ 250mA | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
|
Micro Commercial Co |
MOSFET P+SKY DFN2020-6U |
5,778 |
|
- | P-Channel | Schottky Diode (Isolated) | 20V | 2A (Ta) | 110mOhm @ 2.8A, 4.5V | 1V @ 250µA | 7.2nC @ 4.5V | 480pF @ 15V | 700mW (Ta) | 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | DFN2020-6U |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 7A 8-SOIC |
6,318 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 7.6A/11A 8-SOIC |
7,776 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET P-CH SC88 |
8,190 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
NXP |
MOSFET 2N-CH 30V 5A SOT96-1 |
4,860 |
|
TrenchMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5A | 50mOhm @ 5A, 10V | 1V @ 250µA | 35nC @ 10V | - | 900mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
NXP |
MOSFET 2N-CH 30V 8SOIC |
6,264 |
|
TrenchMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | - | 100mOhm @ 2.2A, 10V | 2.8V @ 1mA | 6nC @ 10V | 250pF @ 20V | 2W | -65°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
NXP |
MOSFET 2N-CH 56LFPAK |
8,676 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |