트랜지스터-FET, MOSFET-어레이
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-어레이
기록 3,829
페이지 69/128
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | FET 기능 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | 입력 커패시턴스 (Ciss) (최대) @ Vds | 전력-최대 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
6,804 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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|
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
7,272 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
5,580 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
8,892 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5.9V | 3.35V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
7,434 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
8,514 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
6,516 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
2,664 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
2,952 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC |
2,286 |
|
EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
3,798 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
7,164 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
8,370 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
3,456 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 10mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
3,456 |
|
EPAD® | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
8,514 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
3,042 |
|
EPAD® | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
3,490 |
|
EPAD® | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
8,676 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
7,668 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
2,088 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
3,636 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
5,076 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
6,102 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | - | - | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
|
Sanken |
MOSFET 4N-CH 100V 10A 12SIP |
6,408 |
|
- | 4 N-Channel | Logic Level Gate | 100V | 10A | 80mOhm @ 5A, 10V | 2V @ 250mA | - | 1630pF @ 10V | 5W | 150°C (TJ) | Through Hole | 12-SIP | 12-SIP w/fin |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
5,004 |
|
EPAD® | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
5,076 |
|
EPAD® | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
6,282 |
|
EPAD® | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
6,048 |
|
EPAD® | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
5,832 |
|
EPAD® | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |