트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 64/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
MOSFET N-CH 40V 12A 8HSOP |
162,054 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 12A (Ta) | 4.5V, 10V | 16.2mOhm @ 12A, 10V | 2.5V @ 1mA | 9.4nC @ 10V | ±20V | 570pF @ 20V | - | 3W (Ta), 25W (Tc) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 8V 3.6A MICROFOOT |
152,556 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 8V | - | 1.2V, 4.5V | 43mOhm @ 2A, 4.5V | 700mV @ 250µA | 13nC @ 4.5V | ±5V | 710pF @ 4V | - | 780mW (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-UFBGA, WLCSP |
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Vishay Siliconix |
MOSFET P-CH 30V 12A SC70-6 |
85,728 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 21mOhm @ 5A, 10V | 2.2V @ 250µA | 45nC @ 10V | ±20V | 1550pF @ 15V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Toshiba Semiconductor and Storage |
MOSFET P CH 12V 12A UDFN6B |
42,912 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 12V | 12A (Ta) | 1.2V, 4.5V | 12mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | ±6V | 2700pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 12V 7A 6WCSP6C |
28,620 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 12V | 7A (Ta) | 1.5V, 4.5V | 18mOhm @ 1.5A, 4.5V | 1V @ 250µA | 5.4nC @ 4.5V | ±8V | 600pF @ 6V | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | 6-WCSPC (1.5x1.0) | 6-UFBGA, WLCSP |
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Rohm Semiconductor |
MOSFET P-CH 45V 2A TSMT |
25,242 |
|
- | P-Channel | MOSFET (Metal Oxide) | 45V | 2A (Ta) | 4V, 10V | 190mOhm @ 2A, 10V | 3V @ 1mA | 9.5nC @ 10V | ±20V | 500pF @ 10V | - | 540mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Diodes Incorporated |
MOSFET N-CH 100V 2.6A TSOT26 |
26,178 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 2.6A (Ta) | 4.5V, 10V | 160mOhm @ 5A, 10V | 3V @ 250µA | 9.7nC @ 10V | ±20V | 1167pF @ 25V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 8A 6-TSOP |
25,500 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 8A (Tc) | 2.5V, 4.5V | 24mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 63nC @ 10V | ±12V | 1670pF @ 10V | - | 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 240V 260MA SOT-89 |
46,302 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 260mA (Ta) | 4.5V, 10V | 6Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | ±20V | 97pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89-4-2 | TO-243AA |
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ON Semiconductor |
MOSFET N-CH 30V 1.1A SSOT3 |
70,812 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.1A (Ta) | 4.5V, 10V | 160mOhm @ 1.4A, 10V | 2V @ 250µA | 3.5nC @ 5V | ±20V | 140pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFETN-CH 60VSOT223 |
2,811 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 4.3A (Ta), 10A (Tc) | 4.5V, 10V | 69mOhm @ 3A, 10V | 3V @ 250µA | 16nC @ 10V | ±20V | 825pF @ 30V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Texas Instruments |
MOSFET N-CH 30V 22A 6SON |
85,310 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 29mOhm @ 5A, 4.5V | 2V @ 250µA | 3.1nC @ 4.5V | ±20V | 468pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-SON (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
X34 PB-F SMALL LOW ON RESISTANCE |
42,684 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 12V | 5.4A (Ta) | 1.2V, 4.5V | 17mOhm @ 5A, 4.5V | 1V @ 1mA | 33nC @ 4.5V | ±6V | 2700pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Vishay Siliconix |
MOSFET P-CH 30V 8A TSOP-6 |
101,676 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 19.2mOhm @ 7A, 10V | 3V @ 250µA | 69nC @ 10V | ±20V | 2580pF @ 15V | - | 2W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Texas Instruments |
MOSFET N-CH 30V 3.1A 0402 |
160,176 |
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FemtoFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 1.8V, 4.5V | 109mOhm @ 500mA, 8V | 1.1V @ 250µA | 1.35nC @ 4.5V | 12V | 195pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Infineon Technologies |
MOSFET N-CH 20V 3.2A 6-TSOP |
277,416 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 2.7V, 4.5V | 100mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 7nC @ 4.5V | ±12V | 300pF @ 15V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
76,806 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | ±20V | 760pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 20A 8DFN |
150,912 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 30A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.2V @ 250µA | 22nC @ 10V | ±20V | 1037pF @ 15V | - | 3W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET P-CH 12V 2.5A TSMT3 |
56,448 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 2.5A (Ta) | 1.5V, 4.5V | 61mOhm @ 2.5A, 4.5V | 1V @ 1mA | 13nC @ 4.5V | ±10V | 1350pF @ 6V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 20V 8A 6LDFN |
24,528 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 8A (Ta) | 1.5V, 4.5V | 12.5mOhm @ 8A, 4.5V | 1V @ 250µA | 18nC @ 4.5V | ±8V | 1140pF @ 10V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN-EP (2x2) | 6-UDFN Exposed Pad |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 1.3A TO252 |
1,034,448 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.3A (Tc) | 10V | 9Ohm @ 650mA, 10V | 4.5V @ 250µA | 8nC @ 10V | ±30V | 160pF @ 25V | - | 45W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 12V 8A DFN2X2B |
91,272 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 8A (Ta) | 1.5V, 4.5V | 21mOhm @ 8A, 4.5V | 900mV @ 250µA | 18nC @ 4.5V | ±8V | 1370pF @ 6V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN-EP (2x2) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 300V .55A 6UDFN |
307,758 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 550mA (Ta) | 2.7V, 10V | 4Ohm @ 300mA, 10V | 2.8V @ 250µA | 7.6nC @ 10V | ±20V | 187.3pF @ 25V | - | 630mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 60V 1.8A 6-TSOP |
50,142 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4.5V, 10V | 111mOhm @ 2.9A, 10V | 3V @ 250µA | 18.1nC @ 10V | ±20V | 942pF @ 30V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 7A TO252 |
23,760 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 7A (Tc) | 4.5V, 10V | 180mOhm @ 3A, 10V | 2.5V @ 250µA | 8.2nC @ 10V | ±20V | 425pF @ 30V | - | 15.6W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 2A SSOT-3 |
275,028 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 2.5V, 4.5V | 80mOhm @ 2A, 4.5V | 1.5V @ 250µA | 9nC @ 4.5V | ±12V | 635pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 20V 3.5A SSOT-6 |
25,206 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 2.5V, 4.5V | 80mOhm @ 3.5A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | ±8V | 779pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 30V 1.7A SOT23-3 |
299,058 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.7A (Ta) | 2.5V, 4.5V | 150mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 2.93nC @ 4.5V | ±12V | 258pF @ 15V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 3A SOT-23 |
69,390 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 3A (Ta) | 4.5V, 10V | 45mOhm @ 3.9A, 10V | 3V @ 250µA | 15nC @ 10V | ±20V | 540pF @ 20V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 3.5A TO252 |
298,236 |
|
AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 100V | 3.5A (Ta), 7A (Tc) | 4.5V, 10V | 140mOhm @ 5A, 10V | 2.7V @ 250µA | 10nC @ 10V | ±20V | 310pF @ 50V | - | 5W (Ta), 17W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |