EPC 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체EPC
기록 54
페이지 2/2
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC |
GANFET TRANS 65V 2.7A BUMPED DIE |
521,712 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 65V | 2A (Ta) | 5V | 530mOhm @ 500mA, 5V | 2.5V @ 250µA | - | +6V, -4V | 21pF @ 32.5V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET N-CH 80V 90A DIE |
48,888 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 90A (Ta) | 5V | 2.2mOhm @ 29A, 5V | 2.5V @ 13mA | 19nC @ 5V | +6V, -4V | 1940pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET N-CH 80V 1.7A 6SOLDER BAR |
56,460 |
|
Automotive, AEC-Q101, eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 1.7A | 5V | 80mOhm @ 1A, 5V | 2.5V @ 600µA | 0.83nC @ 5V | +5.75V, -4V | 88pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GAN TRANS 100V 2.7A BUMPED DIE |
1,642 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 2.7A (Ta) | 5V | 160mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.48nC @ 5V | +6V, -4V | 55pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 100V DIE CU PILLAR |
42,354 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A | 5V | 25mOhm @ 3A, 5V | 2.5V @ 1.5mA | 2.1nC @ 5V | +6V, -4V | 258pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
TRANS GAN 100V DIE 16MOHM |
54,072 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
EPC |
AEC-Q101 GAN FET 80V 20 MOHM |
56,268 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | Die | Die |
|
|
EPC |
TRANS GAN 200V 8MOHM DIE |
27,228 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 48A (Ta) | 5V | 8mOhm @ 20A, 5V | 2.5V @ 7mA | 11nC @ 5V | +6V, -4V | 1140pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
TRANS GAN 100V DIE 4MOHM |
18,876 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 48A | 5V | 3.8mOhm @ 25A, 5V | 2.5V @ 9mA | 14.8nC @ 5V | +6V, -4V | 1895pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 40V 2.7A BUMPED DIE |
4,572 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 2.7A (Ta) | 5V | 110mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | +6V, -4V | 52pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 65V 2.7A BUMPED DIE |
3,960 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 65V | 2.7A (Ta) | 5V | 130mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | +6V, -4V | 52pF @ 32.5V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
TRANS GAN 80V 60A BUMPED DIE |
8,640 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 60A (Ta) | 5V | 2.5mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | +6V, -4V | 1700pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 200V 48A BUMPED DIE |
4,770 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 48A (Ta) | 5V | 10mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | +6V, -4V | 950pF @ 100V | - | - | -40°C ~ 140°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 100V DIE CU PILLAR |
6,138 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A | 5V | 25mOhm @ 3A, 5V | 2.5V @ 1.5mA | 2.3nC @ 5V | +6V, -4V | 280pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 100V BUMPED DIE |
4,392 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 16A (Ta) | 5V | 7mOhm @ 16A, 5V | 2.5V @ 5mA | 6.5nC @ 5V | +6V, -4V | 685pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 100V 25A BUMPED DIE |
3,418 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 25A (Ta) | 5V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | +6V, -5V | 950pF @ 50V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | Die |
|
|
EPC |
GANFET TRANS 100V 6A BUMPED DIE |
4,464 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 6A (Ta) | 5V | 30mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.8nC @ 5V | +6V, -5V | 205pF @ 50V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
|
|
EPC |
GANFET TRANS 200V 12A BUMPED DIE |
3,526 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 12A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | +6V, -4V | 540pF @ 100V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 200V 3A BUMPED DIE |
7,056 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 3A (Ta) | 5V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | +6V, -5V | 145pF @ 100V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 40V 10A BUMPED DIE |
4,482 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 10A (Ta) | 5V | 16mOhm @ 5A, 5V | 2.5V @ 2mA | 2.8nC @ 5V | +6V, -5V | 325pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
|
|
EPC |
GANFET TRANS 40V 33A BUMPED DIE |
5,058 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 33A (Ta) | 5V | 4mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | +6V, -5V | 1200pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | Die |
|
|
EPC |
GANFET TRANS 100V 11A BUMPED DIE |
8,586 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 11A (Ta) | 5V | 16mOhm @ 11A, 5V | 2.5V @ 3mA | 5.2nC @ 5V | +6V, -5V | 520pF @ 50V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 150V 12A BUMPED DIE |
8,388 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 150V | 12A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | +6V, -5V | 540pF @ 100V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GAN TRANS 300V 150MO BUMPED DIE |
7,128 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 300V | 4A (Ta) | 5V | 150mOhm @ 3A, 5V | 2.5V @ 1mA | - | +6V, -4V | 194pF @ 240V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |