Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 1/225
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET P-CH 60V 170MA SOT-23 |
1,107,882 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | 2V @ 20µA | 1.5nC @ 10V | ±20V | 19pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 280MA SOT-323 |
1,809,072 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 4.5V, 10V | 3.5Ohm @ 200mA, 10V | 1.4V @ 26µA | 1.5nC @ 10V | ±20V | 43pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23 |
602,808 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 4.5V, 10V | 3.5Ohm @ 230mA, 10V | 1.4V @ 26µA | 1.4nC @ 10V | ±20V | 41pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V 0.19A SOT-23 |
606,204 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 1.8V @ 13µA | 0.9nC @ 10V | ±20V | 20.9pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 240V 0.11A SOT23 |
888,906 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 110mA (Ta) | 4.5V, 10V | 14Ohm @ 100mA, 10V | 1.8V @ 56µA | 3.1nC @ 10V | ±20V | 77pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 1.5A SOT23 |
710,976 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | ±12V | 143pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 3.4A SOT23 |
725,250 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.4A (Ta) | 2.5V, 4.5V | 63mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.9nC @ 4.5V | ±12V | 270pF @ 24V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 1.5A SOT23 |
261,420 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 150mOhm @ 1.5A, 4.5V | 1.2V @ 11µA | 3.6nC @ 4.5V | ±12V | 346pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 2.3A SOT23 |
230,586 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 4.5V, 10V | 57mOhm @ 2.3A, 10V | 2V @ 11µA | 1.5nC @ 5V | ±20V | 275pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 760MA SOT-23 |
59,328 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 760mA (Ta) | 4.5V, 10V | 600mOhm @ 600mA, 10V | 1V @ 250µA | 5.1nC @ 10V | ±20V | 75pF @ 25V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 1.2A SOT-23 |
631,686 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 1.2A (Ta) | 4.5V, 10V | 250mOhm @ 910mA, 10V | 1V @ 250µA | 5nC @ 10V | ±20V | 85pF @ 25V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 1.2A SOT-23 |
2,288,478 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 2.7V, 4.5V | 250mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | ±12V | 110pF @ 15V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 2A SOT23 |
726,582 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 80mOhm @ 2A, 10V | 2V @ 11µA | 5nC @ 10V | ±20V | 500pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 6.3A SOT-23 |
85,824 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.3A (Ta) | 2.5V, 4.5V | 21mOhm @ 6.3A, 4.5V | 1.1V @ 10µA | 8.9nC @ 4.5V | ±12V | 700pF @ 16V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 3.7A SOT-23 |
1,221,318 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 2.5V, 4.5V | 65mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | ±12V | 633pF @ 10V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 780MA SOT-23 |
288,588 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 780mA (Ta) | 2.7V, 4.5V | 600mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | ±12V | 97pF @ 15V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 12V 4.3A SOT-23 |
1,835,610 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 4.3A (Ta) | 1.8V, 4.5V | 50mOhm @ 4.3A, 4.5V | 950mV @ 250µA | 15nC @ 5V | ±8V | 830pF @ 10V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 5A SOT23 |
2,249,700 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 2.5V, 4.5V | 29mOhm @ 5A, 4.5V | 1.1V @ 10µA | 6.8nC @ 4.5V | ±12V | 650pF @ 25V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 3A SOT-23 |
248,382 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 98mOhm @ 3A, 10V | 2.5V @ 250µA | 14nC @ 10V | ±20V | 510pF @ 25V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 1.5A SOT363 |
269,598 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 175mOhm @ 1.5A, 4.5V | 1.2V @ 8µA | 5.7nC @ 4.5V | ±12V | 228pF @ 15V | - | 560mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 20V 4.2A SOT-23 |
789,030 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 45mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | ±12V | 740pF @ 15V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 2.7A SOT-23-3 |
2,790,528 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.7A (Ta) | 4.5V, 10V | 92mOhm @ 2.7A, 10V | 2.5V @ 25µA | 2.5nC @ 4.5V | ±16V | 290pF @ 25V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 86A DPAK |
286,362 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 5.8mOhm @ 25A, 10V | 2.35V @ 50µA | 23nC @ 4.5V | ±20V | 2150pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 3.2A 6-TSOP |
80,112 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 4.5V, 10V | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 9.6nC @ 10V | ±20V | 210pF @ 25V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 4.7A 6TSOP |
233,310 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 2.5V, 4.5V | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 10V | ±12V | 654pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 39A TDSON-8 |
147,438 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 39A (Tc) | 4.5V, 10V | 12mOhm @ 30A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1500pF @ 15V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 4SOT223 |
22,374 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 2.8V, 10V | 6Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8nC @ 10V | ±20V | 95pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 80V 23A TSDSON-8 |
146,436 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 6A (Ta), 23A (Tc) | 6V, 10V | 34mOhm @ 12A, 10V | 3.5V @ 12µA | 9.1nC @ 10V | ±20V | 630pF @ 40V | - | 2.1W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 2A SOT223 |
261,168 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2A (Ta) | 4V, 10V | 140mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | ±16V | 230pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 80V 23A TDSON-8 |
259,758 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 7A (Ta), 23A (Tc) | 6V, 10V | 34mOhm @ 12A, 10V | 3.5V @ 12µA | 9.1nC @ 10V | ±20V | 756pF @ 40V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |