Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 2/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 100V 1.6A SOT223 |
359,238 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.6A (Ta) | 10V | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 25V 12A TSDSON-8 |
37,032 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 2V @ 250µA | 9.1nC @ 10V | ±20V | 670pF @ 12V | - | 2.1W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 9.4A DPAK |
115,776 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 210mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 11A 8-PQFN |
29,172 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 24A (Tc) | 10V, 20V | 10mOhm @ 11A, 20V | 2.4V @ 25µA | 48nC @ 10V | ±25V | 1543pF @ 25V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 20A TSDSON-8 |
254,220 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 11mOhm @ 20A, 10V | 4V @ 23µA | 33nC @ 10V | ±20V | 2700pF @ 30V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
100,566 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK |
20,988 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 81A TDSON-8 |
257,694 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 17A (Ta), 81A (Tc) | 10V | 5.4mOhm @ 50A, 10V | 4V @ 27µA | 34nC @ 10V | ±20V | 2800pF @ 20V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 3.1A SOT223 |
389,592 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 3.1A (Ta) | 4V, 10V | 65mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | ±16V | 510pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 40V 49A TDSON-8 |
266,496 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 13A (Ta), 49A (Tc) | 4.5V, 10V | 9.3mOhm @ 40A, 10V | 2V @ 14µA | 24nC @ 10V | ±20V | 1900pF @ 20V | - | 2.5W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 40A TSDSON-8 |
82,158 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 13.5A (Ta), 40A (Tc) | 6V, 10V | 8.6mOhm @ 20A, 10V | 3.1V @ 105µA | 57.5nC @ 10V | ±25V | 4785pF @ 15V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 40A TSDSON-8 |
351,294 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 9.7mOhm @ 20A, 10V | 2V @ 14µA | 24nC @ 10V | ±20V | 1900pF @ 20V | - | 2.1W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
758,724 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 13µA | 20nC @ 10V | ±16V | 1520pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 73A TDSON-8 |
252,480 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 16A (Ta), 73A (Tc) | 4.5V, 10V | 5.9mOhm @ 50A, 10V | 2V @ 23µA | 40nC @ 10V | ±20V | 3200pF @ 20V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 39A TDSON-8 |
256,812 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 39A (Ta), 58A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2V @ 250µA | 10.4nC @ 10V | ±20V | 760pF @ 12V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 17A TDSON-8 |
75,984 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 57A (Tc) | 4.5V, 10V | 5.2mOhm @ 30A, 10V | 2V @ 250µA | 12nC @ 10V | ±20V | 770pF @ 15V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 25A TO252-3 |
44,364 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Tc) | 4.5V, 10V | 30mOhm @ 25A, 10V | 2.2V @ 8µA | 16.3nC @ 10V | ±16V | 1220pF @ 25V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 85A TDSON-8 |
680,022 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta), 85A (Tc) | 4.5V, 10V | 5mOhm @ 50A, 10V | 2V @ 27µA | 47nC @ 10V | ±20V | 3700pF @ 20V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
29,418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 4.6A SOT223 |
150,780 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 31mOhm @ 4.6A, 10V | 1V @ 250µA | 50nC @ 10V | ±16V | 840pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223 |
119,946 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 300mOhm @ 1.9A, 10V | 2V @ 460µA | 20nC @ 10V | ±20V | 460pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
74,400 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 4.5V, 10V | 1.8Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | ±20V | 357pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CHANNEL 40V 50A 8TDSON |
295,884 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 7V, 10V | 5.8mOhm @ 25A, 10V | 3.4V @ 13µA | 18nC @ 10V | ±20V | 1090pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
128,622 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 7.4mOhm @ 20A, 10V | 2V @ 10µA | 17nC @ 10V | ±16V | 920pF @ 25V | - | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
95,718 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 2.6mOhm @ 20A, 10V | 2V @ 250µA | 26nC @ 10V | ±20V | 1700pF @ 15V | - | 2.1W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 93A TDSON-8 |
37,914 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 42nC @ 10V | ±20V | 3500pF @ 15V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 18A TSDSON-8 |
314,328 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 5.3A (Ta), 18A (Tc) | 6V, 10V | 44mOhm @ 12A, 10V | 2.7V @ 12µA | 9.1nC @ 10V | ±20V | 640pF @ 50V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3 |
52,536 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 12mOhm @ 50A, 10V | 2.2V @ 20µA | 40nC @ 10V | ±16V | 2890pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 18.5A 6PQFN |
82,512 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 18.5A (Tc) | 4.5V, 10V | 17mOhm @ 11A, 10V | 2.3V @ 10µA | 8nC @ 4.5V | ±20V | 660pF @ 25V | - | 11.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-VDFN Exposed Pad |
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Infineon Technologies |
MOSFET P-CH 30V 8A 8-SOIC |
75,126 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | 1V @ 250µA | 60nC @ 10V | ±20V | 2320pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |