ISSI, Integrated Silicon Solution Inc 기억
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카테고리반도체 / 메모리 IC / 기억
제조업체ISSI, Integrated Silicon Solution Inc
기록 4,379
페이지 106/146
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시리즈 | 메모리 유형 | 메모리 포맷 | 기술 | 메모리 크기 | 메모리 인터페이스 | 시계 주파수 | 쓰기주기 시간-단어, 페이지 | 접근 시간 | 전압-공급 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90LFBGA |
2,502 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-LFBGA (13x11) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90LFBGA |
8,964 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.5ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-LFBGA (13x11) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90LFBGA |
3,654 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.5ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-LFBGA (13x11) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90LFBGA |
8,298 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.5ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-LFBGA (13x11) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90LFBGA |
5,220 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.5ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-LFBGA (13x11) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
3,024 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.5ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
8,910 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.5ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
8,100 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.5ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
7,470 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.5ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
6,984 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
4,968 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
3,906 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
2,304 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
8,208 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
3,600 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
3,294 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
4,392 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
5,112 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
8,514 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
2,484 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
5,832 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
2,628 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
6,894 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 86TSOP II |
4,536 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 86TSOP II |
6,480 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 86TSOP II |
3,456 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
4,032 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
3,348 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
4,824 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 86TSOP II |
5,562 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |