IXYS Integrated Circuits Division PMIC-게이트 드라이버
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카테고리반도체 / 전력 관리 IC / PMIC-게이트 드라이버
제조업체IXYS Integrated Circuits Division
기록 125
페이지 3/5
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 구동 구성 | 채널 유형 | 드라이버 수 | 게이트 유형 | 전압-공급 | 논리 전압-VIL, VIH | 전류-피크 출력 (소스, 싱크) | 입력 유형 | 높은 측 전압-최대 (부트 스트랩) | 상승 / 하강 시간 (일반) | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
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IXYS Integrated Circuits Division |
IC GATE DVR 2A DUAL HS 8DFN |
5,130 |
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- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
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IXYS Integrated Circuits Division |
2A 8 LEAD SOIC DUAL NON INVERTIN |
11,121 |
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- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
2A MOSFET 8 DIP DUAL INV/NON-INV |
8,856 |
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- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
2A 8 DIP DUAL INVERTING |
2,916 |
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- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 3A SOIC |
7,272 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 3V | 3A, 3A | Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 3A SOIC |
3,472 |
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- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 3V | 3A, 3A | Non-Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 3A SOIC |
2,574 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 3V | 3A, 3A | Inverting, Non-Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
3 AMP, DUAL INVERTING, LOW-SIDE |
7,884 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 3V | 3A, 3A | Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | - | - | - |
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IXYS Integrated Circuits Division |
3 AMP, DUAL NON-INVERTING, LOW-S |
3,204 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 3V | 3A, 3A | Non-Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | - | - | - |
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IXYS Integrated Circuits Division |
3 AMP, DUAL, ONE INVERTING AND O |
2,574 |
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- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 3V | 3A, 3A | Non-Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | - | - | - |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 3A SOIC |
6,624 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 3V | 3A, 3A | Inverting, Non-Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
3A DUAL NON-INVERTING LOW SIDE G |
8,820 |
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- | Low-Side | Independent | 2 | IGBT | 4.5V ~ 35V | 0.8V, 3V | 3A, 3A | CMOS/TTL | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC |
7,380 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
7,740 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
4,644 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC |
4,086 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC |
8,946 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC |
8,910 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8DFN |
25,182 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC |
110,727 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DIP |
3,654 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
3,816 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DIP |
8,784 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8DIP |
3,006 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
2A 8SOIC EXP MTL DUAL IN/NON-INV |
7,992 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
2A 8 SOIC EXP METAL DUAL INVERT |
3,798 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
2A 8SOIC EXP MTL DUAL NON INVERT |
3,708 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
2A 8SOIC EXP MTL DUAL IN/NON-INV |
4,068 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
2A 8 SOIC EXP METAL DUAL INVERT |
4,878 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC HIGH SIDE DRIVER 8DIP |
2,646 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 12V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 23ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |