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Micron Technology Inc. 기억

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카테고리반도체 / 메모리 IC / 기억
제조업체Micron Technology Inc.
기록 8,604
페이지 210/287
이미지
부품 번호
제조업체
설명
재고 있음
수량
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메모리 유형
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메모리 인터페이스
시계 주파수
쓰기주기 시간-단어, 페이지
접근 시간
전압-공급
작동 온도
장착 유형
패키지 / 케이스
공급자 장치 패키지
MT49H64M9FM-25E:B
Micron Technology Inc.
IC DRAM 576M PARALLEL 144UBGA
7,578
-
Volatile
DRAM
DRAM
576Mb (64M x 9)
Parallel
400MHz
-
15ns
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-µBGA (18.5x11)
MT49H64M9FM-25E:B TR
Micron Technology Inc.
IC DRAM 576M PARALLEL 144UBGA
6,624
-
Volatile
DRAM
DRAM
576Mb (64M x 9)
Parallel
400MHz
-
15ns
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-µBGA (18.5x11)
MT49H8M36BM-5:B
Micron Technology Inc.
IC DRAM 288M PARALLEL 144UBGA
5,328
-
Volatile
DRAM
DRAM
288Mb (8M x 36)
Parallel
200MHz
-
20ns
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-µBGA (18.5x11)
MT49H8M36BM-TI:B
Micron Technology Inc.
IC DRAM 288M PARALLEL 144UBGA
2,484
-
Volatile
DRAM
DRAM
288Mb (8M x 36)
Parallel
-
-
-
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-µBGA (18.5x11)
MT49H8M36BM-TI:B TR
Micron Technology Inc.
IC DRAM 288M PARALLEL 144UBGA
5,130
-
Volatile
DRAM
DRAM
288Mb (8M x 36)
Parallel
-
-
-
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-µBGA (18.5x11)
MT49H8M36FM-25 IT:B
Micron Technology Inc.
IC DRAM 288M PARALLEL 144UBGA
4,446
-
Volatile
DRAM
DRAM
288Mb (8M x 36)
Parallel
400MHz
-
20ns
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
Surface Mount
144-TFBGA
144-µBGA (18.5x11)
MT49H8M36FM-25 IT:B TR
Micron Technology Inc.
IC DRAM 288M PARALLEL 144UBGA
7,092
-
Volatile
DRAM
DRAM
288Mb (8M x 36)
Parallel
400MHz
-
20ns
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
Surface Mount
144-TFBGA
144-µBGA (18.5x11)
MT49H8M36SJ-5:B
Micron Technology Inc.
IC DRAM 288M PARALLEL 144FBGA
3,618
-
Volatile
DRAM
DRAM
288Mb (8M x 36)
Parallel
200MHz
-
20ns
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-FBGA (18.5x11)
MT49H8M36SJ-TI:B
Micron Technology Inc.
IC DRAM 288M PARALLEL 144FBGA
8,388
-
Volatile
DRAM
DRAM
288Mb (8M x 36)
Parallel
-
-
-
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-FBGA (18.5x11)
MT49H8M36SJ-TI:B TR
Micron Technology Inc.
IC DRAM 288M PARALLEL 144FBGA
7,524
-
Volatile
DRAM
DRAM
288Mb (8M x 36)
Parallel
-
-
-
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-FBGA (18.5x11)
MT29E1HT08ELHBBG1-3:B
Micron Technology Inc.
IC FLASH 1.5T PARALLEL 272VBGA
13,109
-
Non-Volatile
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
-
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29E256G08CBHBBJ4-3ES:B
Micron Technology Inc.
IC FLASH 256G PARALLEL 333MHZ
8,640
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
132-VBGA (12x18)
MT29E3T08EQHBBG2-3:B
Micron Technology Inc.
IC FLASH 3T PARALLEL 333MHZ
7,362
-
Non-Volatile
FLASH
FLASH - NAND
3Tb (384G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
272-LFBGA
-
MT29E3T08EQHBBG2-3ES:B
Micron Technology Inc.
IC FLASH 3T PARALLEL 333MHZ
2,376
-
Non-Volatile
FLASH
FLASH - NAND
3Tb (384G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
272-LFBGA
-
MT29E4T08EYHBBG9-3:B
Micron Technology Inc.
IC FLASH 4T PARALLEL 333MHZ
3,474
-
Non-Volatile
FLASH
FLASH - NAND
4Tb (512G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29E4T08EYHBBG9-3ES:B
Micron Technology Inc.
IC FLASH 4T PARALLEL 333MHZ
6,858
-
Non-Volatile
FLASH
FLASH - NAND
4Tb (512G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F128G08CECGBJ4-5M:G
Micron Technology Inc.
IC FLASH 128G PARALLEL 132VBGA
8,046
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29F128G08CFCGBWP-10M:G
Micron Technology Inc.
IC FLASH 128G PARALLEL 100MHZ
7,146
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT29F1G01ABAFD12-AATES:F
Micron Technology Inc.
IC FLASH 1G SPI 24TBGA
7,902
-
Non-Volatile
FLASH
FLASH - NAND
1Gb (1G x 1)
SPI
-
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
MT29F256G08CBHBBL06B3WC1-R
Micron Technology Inc.
IC FLASH 256G PARALLEL WAFER
2,556
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
-
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F2T08CUCBBK9-37ES:B
Micron Technology Inc.
IC FLASH 2T PARALLEL 267MHZ
5,814
-
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
267MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F384G08EBHBBB0KB3WC1-R
Micron Technology Inc.
IC FLASH 384G PARALLEL WAFER
5,256
-
Non-Volatile
FLASH
FLASH - NAND
384Gb (48G x 8)
Parallel
-
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
-
MT52L256M64D2QA-125 XT ES:B
Micron Technology Inc.
IC DRAM 16G 800MHZ FBGA
6,444
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
16Gb (256M x 64)
-
800MHz
-
-
1.2V
-
-
-
-
MT52L256M64D2QB-125 XT ES:B
Micron Technology Inc.
IC DRAM 16G 800MHZ FBGA
3,402
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
16Gb (256M x 64)
-
800MHz
-
-
1.2V
-
-
-
-
MT53B384M16D1Z0APWC1
Micron Technology Inc.
IC SDRAM 6GBIT DIE
3,276
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
6Gb (384M x 16)
-
-
-
-
1.1V
0°C ~ 85°C (TC)
-
-
-
MT53B384M16D1Z0AQWC1
Micron Technology Inc.
IC SDRAM 6GBIT DIE
7,272
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
6Gb (384M x 16)
-
-
-
-
1.1V
0°C ~ 85°C (TC)
-
-
-
MT53B384M64D4NZ-053 WT ES:C
Micron Technology Inc.
IC DRAM 24G 1866MHZ FBGA
4,608
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
24Gb (384M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT53B384M64D4NZ-053 WT:C
Micron Technology Inc.
IC DRAM 24G 1866MHZ FBGA
6,192
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
24Gb (384M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MTFC16GAKAECN-5M AIT
Micron Technology Inc.
IC FLASH 128G MMC 153VFBGA
7,884
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
MMC
-
-
-
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
Surface Mount
153-VFBGA
153-VFBGA (11.5x13)
MTFC32GAKAECN-5M AIT
Micron Technology Inc.
IC FLASH 256G MMC 169WFBGA
6,336
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
153-VFBGA
153-VFBGA (11.5x13)