Micron Technology Inc. 기억

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쓰기주기 시간-단어, 페이지

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공급자 장치 패키지

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카테고리반도체 / 메모리 IC / 기억

제조업체Micron Technology Inc.

기록 8,604

페이지 263/287

부품 번호	제조업체	설명	재고 있음	시리즈	메모리 유형	메모리 포맷	기술	메모리 크기	메모리 인터페이스	시계 주파수	쓰기주기 시간-단어, 페이지	접근 시간	전압-공급	작동 온도	장착 유형	패키지 / 케이스	공급자 장치 패키지
MT53B256M64D2NK-053 WT ES:C	Micron Technology Inc.	IC DRAM 16G 1866MHZ FBGA	7,902	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B256M64D2NK-062 WT ES:C	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA	2,934	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B256M64D2PX-062 XT ES:C	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA	5,022	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-	-	-	-
MT53B256M64D2TG-062 XT ES:C	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA	6,390	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53B2DANW-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4	6,102	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-
MT53B2DDNP-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4	2,862	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT53B2G32D8QD-062 WT ES:D	Micron Technology Inc.	LPDDR4 64G 2GX32 FBGA 8DP	5,166	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B2G32D8QD-062 WT:D	Micron Technology Inc.	LPDDR4 64G 2GX32 FBGA 8DP	6,138	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B384M32D2NK-062 WT ES:B	Micron Technology Inc.	IC DRAM 12G 1600MHZ FBGA	7,272	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B384M64D4EZ-062 WT ES:B	Micron Technology Inc.	IC DRAM 24G 1600MHZ FBGA	6,588	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B384M64D4NH-062 WT ES:B	Micron Technology Inc.	IC DRAM 24G 1600MHZ FBGA	7,146	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	272-WFBGA	272-WFBGA (15x15)
MT53B384M64D4NK-053 WT ES:A	Micron Technology Inc.	IC DRAM 24G 1866MHZ FBGA	3,400	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	366-WFBGA	366-WFBGA (15x15)
MT53B384M64D4NK-053 WT ES:B	Micron Technology Inc.	IC DRAM 24G 1866MHZ FBGA	4,788	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	366-WFBGA	366-WFBGA (15x15)
MT53B384M64D4NK-062 WT ES:B	Micron Technology Inc.	IC DRAM 24G 1600MHZ FBGA	4,860	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	366-WFBGA	366-WFBGA (15x15)
MT53B384M64D4TP-062 XT ES:B	Micron Technology Inc.	IC DRAM 24G 1600MHZ FBGA	4,140	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1600MHz	-	-	1.1V	-	-	-	-
MT53B4DANW-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4	4,086	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-
MT53B4DAPV-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4	8,190	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-
MT53B4DAWT-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4	5,886	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-
MT53B4DCNQ-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4	6,282	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	Surface Mount	200-VFBGA	200-VFBGA (10x14.5)
MT53B512M32D2NP-062 WT ES:C	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA	3,708	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT53B512M32D2NP-062 WT ES:D	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA	4,392	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT53B512M64D4EZ-062 WT:B	Micron Technology Inc.	IC DRAM 32G 1600MHZ FBGA	8,676	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4EZ-062 WT:C	Micron Technology Inc.	IC DRAM 32G 1600MHZ FBGA	4,572	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4NK-053 WT ES:C	Micron Technology Inc.	IC DRAM 32G 1866MHZ FBGA	7,020	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	366-WFBGA	366-WFBGA (15x15)
MT53B512M64D4NK-062 WT ES:C	Micron Technology Inc.	IC DRAM 32G 1600MHZ FBGA	9,469	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	366-WFBGA	366-WFBGA (15x15)
MT53B512M64D4NW-062 WT ES:D	Micron Technology Inc.	IC DRAM 32G 1600MHZ FBGA	3,078	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4NZ-062 WT ES:D	Micron Technology Inc.	IC DRAM 32G 1600MHZ FBGA	6,768	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4PV-053 WT ES:C	Micron Technology Inc.	IC DRAM 32G 1866MHZ FBGA	5,598	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4PV-062 WT ES:C	Micron Technology Inc.	IC DRAM 32G 1600MHZ FBGA	6,534	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4TX-053 WT ES:C	Micron Technology Inc.	IC DRAM 32G 1866MHZ FBGA	5,994	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-

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