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Micron Technology Inc. 기억

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카테고리반도체 / 메모리 IC / 기억
제조업체Micron Technology Inc.
기록 8,604
페이지 48/287
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
메모리 유형
메모리 포맷
기술
메모리 크기
메모리 인터페이스
시계 주파수
쓰기주기 시간-단어, 페이지
접근 시간
전압-공급
작동 온도
장착 유형
패키지 / 케이스
공급자 장치 패키지
MT53D1024M32D4DT-053 WT:D TR
Micron Technology Inc.
IC DRAM 32G 1866MHZ FBGA
2,376
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
MT53D512M64D4NZ-046 WT:E TR
Micron Technology Inc.
IC DRAM 32G 2133MHZ
4,590
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
376-WFBGA
376-WFBGA (14x14)
MT53D512M64D4RQ-046 WT:E TR
Micron Technology Inc.
IC DRAM 32G 2133MHZ
5,940
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
556-WFBGA
556-WFBGA (12.4x12.4)
MT53D512M64D4RQ-053 WT:E TR
Micron Technology Inc.
IC DRAM 32G 1866MHZ
5,094
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
556-WFBGA
556-WFBGA (12.4x12.4)
MT53E1G32D4NQ-053 WT:E
Micron Technology Inc.
LPDDR4 32G 1GX32 FBGA WT QDP
3,436
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E512M64D4NW-053 WT:E
Micron Technology Inc.
LPDDR4 32G 512MX64 FBGA WT QDP
5,958
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E1G32D4NQ-053 WT:E TR
Micron Technology Inc.
LPDDR4 32G 1GX32 FBGA WT QDP
3,420
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E512M64D4NW-053 WT:E TR
Micron Technology Inc.
LPDDR4 32G 512MX64 FBGA WT QDP
3,150
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D1024M32D4DT-046 WT:D TR
Micron Technology Inc.
IC DRAM LPDDR4 32G FBGA
7,794
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
2.133GHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
-
-
MT53D512M64D8HR-053 WT:B TR
Micron Technology Inc.
IC DRAM LPDDR4 32G SMD
6,768
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E512M64D4NK-046 WT:D TR
Micron Technology Inc.
IC DRAM LPDDR4 BGA
8,640
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E512M64D4NK-053 WT:D TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
7,830
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D1024M32D4DT-046 WT:D
Micron Technology Inc.
IC DRAM LPDDR4 32G FBGA
2,543
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
2.133GHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
-
-
MT53E512M64D4NK-046 WT:D
Micron Technology Inc.
IC DRAM LPDDR4 BGA
585
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E512M64D4NK-053 WT:D
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
3,336
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MTFC64GAPALBH-AIT
Micron Technology Inc.
IC FLASH 512G MMC
438
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
153-TFBGA
153-TFBGA (11.5x13)
MTFC64GAPALBH-AIT TR
Micron Technology Inc.
IC FLASH 512G MMC
2,052
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
153-TFBGA
153-TFBGA (11.5x13)
MT53D512M32D2DS-053 AUT:D TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
8,658
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1.866GHz
-
-
0.6V, 1.1V
-40°C ~ 125°C
Surface Mount
-
-
MT53D512M32D2DS-053 AUT:D
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
143
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1.866GHz
-
-
0.6V, 1.1V
-40°C ~ 125°C
Surface Mount
-
-
MT29F512G08CECBBJ4-5M:B TR
Micron Technology Inc.
IC FLASH 512G PARALLEL 200MHZ
7,380
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
200MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
132-VBGA
132-VBGA (12x18)
MT44K32M18RB-093E:B
Micron Technology Inc.
IC DRAM 576M PARALLEL 1067MHZ
4,734
-
Volatile
DRAM
DRAM
576Mb (32M x 18)
Parallel
1067MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
MT49H16M36SJ-18:B TR
Micron Technology Inc.
IC DRAM 576M PARALLEL 144FBGA
8,838
-
Volatile
DRAM
DRAM
576Mb (16M x 36)
Parallel
533MHz
-
15ns
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-FBGA (18.5x11)
MT29F512G08CEHBBJ4-3R:B TR
Micron Technology Inc.
IC FLASH 512G PARALLEL 333MHZ
6,912
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29F512G08CEHBBJ4-3R:B
Micron Technology Inc.
IC FLASH 512G PARALLEL 333MHZ
1,924
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29F64G08AECABH1-10ITZ:A TR
Micron Technology Inc.
IC FLASH 64G PARALLEL 100VBGA
8,622
-
Non-Volatile
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-VBGA
100-VBGA (12x18)
MT29F64G08AECABH1-10ITZ:A
Micron Technology Inc.
IC FLASH 64G PARALLEL 100VBGA
2,317
-
Non-Volatile
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-VBGA
100-VBGA (12x18)
MT52L1G32D4PG-093 WT:B
Micron Technology Inc.
IC DRAM 32G 1067MHZ FBGA
3,294
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
32Gb (1G x 32)
-
1067MHz
-
-
1.2V
-30°C ~ 85°C (TC)
Surface Mount
178-VFBGA
178-FBGA (12x11.5)
MT52L1G32D4PG-107 WT:B TR
Micron Technology Inc.
IC DRAM 32G 933MHZ FBGA
2,520
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
32Gb (1G x 32)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
Surface Mount
178-VFBGA
178-FBGA (12x11.5)
MT52L512M64D4PQ-107 WT:B TR
Micron Technology Inc.
IC DRAM 32G 933MHZ FBGA
8,082
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
32Gb (512M x 64)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
Surface Mount
253-VFBGA
253-VFBGA (11x11.5)
MT52L512M64D4PQ-107 WT:B
Micron Technology Inc.
IC DRAM 32G 933MHZ 253VFBGA
4,248
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
32Gb (512M x 64)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
Surface Mount
253-VFBGA
253-VFBGA (11x11.5)