Rohm Semiconductor 정류기-싱글
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Rohm Semiconductor
기록 774
페이지 16/26
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 12A TO263AB |
4,970 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 12A (DC) | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 438pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Rohm Semiconductor |
DIODES SILICON CARBIDE |
4,914 |
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- | Silicon Carbide Schottky | 650V | 20A (DC) | 1.5V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 1000pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 20A TO263AB |
1,150 |
|
- | Silicon Carbide Schottky | 650V | 20A | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 15A TO263AB |
7,485 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 15A (DC) | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 5A TO220ACFP |
15,888 |
|
- | Standard | 600V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C (Max) |
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Rohm Semiconductor |
DIODE GP 600V 10A TO220ACFP |
22,068 |
|
- | Standard | 600V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220ACFP | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 430V 20A TO220FN |
17,244 |
|
- | Standard | 430V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 430V | - | Through Hole | TO-220-3 Full Pack | TO-220FN | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM |
13,404 |
|
- | Standard | 600V | 20A | 2.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
DIODE GP 600V 20A TO220ACFP |
21,048 |
|
- | Standard | 600V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 2A TO220-2 |
16,920 |
|
- | Silicon Carbide Schottky | 650V | 2A (DC) | 1.5V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 10.8µA @ 650V | 110pF @ 1V, 1MHz | Through Hole | TO-220-2 | - | 175°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 5A TO220NFM |
18,108 |
|
- | Standard | 600V | 5A | 2.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 5A TO220NFM |
17,172 |
|
- | Standard | 600V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 300V 20A TO220NFM |
20,604 |
|
- | Standard | 300V | 20A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 12A TO220AC |
23,640 |
|
- | Standard | 600V | 12A | 2.8V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220ACFP | 150°C (Max) |
|
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|
Rohm Semiconductor |
DIODE GEN PURP 600V 15A TO220AC |
9,300 |
|
- | Standard | 600V | 15A | 2.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220ACFP | 150°C (Max) |
|
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Rohm Semiconductor |
DIODE GEN PURP 430V 20A TO220NFM |
20,352 |
|
- | Standard | 430V | 20A | 1.6V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 430V | - | Through Hole | TO-220-3 Full Pack | TO-220NFM | 150°C (Max) |
|
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Rohm Semiconductor |
DIODE GEN PURP 400V 20A TO220FN |
7,344 |
|
- | Standard | 400V | 20A | 1.6V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 400V | - | Through Hole | TO-220-3 Full Pack | TO-220FN | 150°C (Max) |
|
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Rohm Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM |
22,176 |
|
- | Standard | 600V | 20A | 2.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-220-3 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 530V 20A TO220NFM |
22,248 |
|
- | Standard | 530V | 20A | 2V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 530V | - | Through Hole | TO-220-3 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 15A TO247 |
9,648 |
|
- | Standard | 600V | 15A | 2.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-247-3 | TO-247 | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 30A TO247 |
5,328 |
|
- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-247-3 | TO-247 | 150°C (Max) |
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Rohm Semiconductor |
DIODE SC SCHKY 650V 8A TO220ACP |
17,052 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.5V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 400pF @ 1V, 1MHz | Through Hole | TO-220-2 | - | 175°C (Max) |
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Rohm Semiconductor |
RB531SM-40FH IS THE HIGH RELIABI |
75,696 |
|
Automotive, AEC-Q101 | Schottky | 40V | 100mA | 610mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 100µA @ 40V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 125°C (Max) |
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Rohm Semiconductor |
RB511VM-40FH IS SUPRT LOW V |
28,686 |
|
Automotive, AEC-Q101 | Schottky | 40V | 100mA | 410mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 25µA @ 40V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 125°C (Max) |
|
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Rohm Semiconductor |
RFUH5TF6SFH IS THE HIGH RELIABIL |
14,016 |
|
Automotive, AEC-Q101 | Standard | 600V | 5A | 2.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
14,490 |
|
Automotive, AEC-Q101 | Standard | 600V | 10A | 1.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
22,236 |
|
Automotive, AEC-Q101 | Standard | 600V | 10A | 2.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
21,972 |
|
Automotive, AEC-Q101 | Standard | 600V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
|
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Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
12,498 |
|
Automotive, AEC-Q101 | Standard | 800V | 5A | 2.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
20,256 |
|
Automotive, AEC-Q101 | Standard | 300V | 20A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 300V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |