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시리즈

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다이오드 유형

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전압-DC 역방향 (Vr) (최대)

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전류-평균 정류 (Io)

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전압-순방향 (Vf) (최대) @ If

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속도

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역 복구 시간 (trr)

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전류-역방향 누설 @ Vr

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커패시턴스 @ Vr, F

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장착 유형

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패키지 / 케이스

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공급자 장치 패키지

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작동 온도-접합

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필터보기

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필터 적용

카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글

기록 34,936

페이지 1055/1165

부품 번호	제조업체	설명	재고 있음	시리즈	다이오드 유형	전압-DC 역방향 (Vr) (최대)	전류-평균 정류 (Io)	전압-순방향 (Vf) (최대) @ If	속도	역 복구 시간 (trr)	전류-역방향 누설 @ Vr	커패시턴스 @ Vr, F	장착 유형	패키지 / 케이스	공급자 장치 패키지	작동 온도-접합
ES3J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	3,436	-	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3JHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	6,984	Automotive, AEC-Q101	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ESH3B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	5,832	-	Standard	100V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3C M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	6,966	-	Standard	150V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	7,596	-	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
HS3A M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	7,452	-	Standard	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	8,838	-	Standard	100V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	5,454	-	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3F M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AB	5,436	-	Standard	300V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	7,272	-	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	4,500	-	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3K M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	5,742	-	Standard	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3M M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AB	4,356	-	Standard	-	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5A M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A DO214AB	5,436	-	Standard	50V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	4,572	-	Standard	100V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB	7,866	-	Standard	200V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5F M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 5A DO214AB	5,112	-	Standard	300V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AB	3,508	-	Standard	400V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AB	4,230	-	Standard	600V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5K M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	3,402	-	Standard	800V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5M M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 5A DO214AB	3,978	-	Standard	-	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR305S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	4,374	-	Standard	50V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR305SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	7,452	Automotive, AEC-Q101	Standard	50V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR310S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	8,244	-	Standard	100V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR310SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	2,934	Automotive, AEC-Q101	Standard	100V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR315S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	7,668	-	Standard	150V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR315SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	8,352	Automotive, AEC-Q101	Standard	150V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR320S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	3,060	-	Standard	200V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR320SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	4,698	Automotive, AEC-Q101	Standard	200V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR340SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	7,272	Automotive, AEC-Q101	Standard	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C

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