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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1088/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
GPA803 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
4,644
-
Standard
200V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA803HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
6,336
Automotive, AEC-Q101
Standard
200V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA804 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AC
3,906
-
Standard
400V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA804HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AC
2,718
Automotive, AEC-Q101
Standard
400V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA806 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A TO220AC
7,632
-
Standard
800V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA806HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A TO220AC
3,708
Automotive, AEC-Q101
Standard
800V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA807 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 8A TO220AC
7,740
-
Standard
-
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA807HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 8A TO220AC
2,196
Automotive, AEC-Q101
Standard
-
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
HERAF1001G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 10A ITO220AC
8,172
-
Standard
50V
10A
1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1002G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A ITO220AC
3,508
-
Standard
100V
10A
1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1003G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A ITO220AC
4,500
-
Standard
200V
10A
1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1006G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A ITO220AC
4,086
-
Standard
600V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
10µA @ 600V
60pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1601G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 16A ITO220AC
2,466
-
Standard
50V
16A
1V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
150pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1602G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A ITO220AC
2,592
-
Standard
100V
16A
1V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
150pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1603G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 16A ITO220AC
3,348
-
Standard
200V
16A
1V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
150pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1604G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 16A ITO220AC
2,484
-
Standard
300V
16A
1V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
150pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF801G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A ITO220AC
8,964
-
Standard
50V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF802G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A ITO220AC
7,578
-
Standard
100V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF803G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A ITO220AC
2,088
-
Standard
200V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF804G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 8A ITO220AC
6,768
-
Standard
300V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF805G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A ITO220AC
3,294
-
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF807G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A ITO220AC
6,192
-
Standard
800V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
10µA @ 800V
60pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
MBR10100 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
3,744
-
Schottky
100V
10A
850mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR10150HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 10A TO220AC
7,596
Automotive, AEC-Q101
Standard
150V
10A
1.05V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR10200 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A TO220AC
7,236
-
Standard
200V
10A
1.05V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR10200HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A TO220AC
8,172
Automotive, AEC-Q101
Standard
200V
10A
1.05V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1035 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 35V 10A TO220AC
3,490
-
Standard
35V
10A
700mV @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1035HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 35V 10A TO220AC
5,436
Automotive, AEC-Q101
Standard
35V
10A
700mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1045 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 45V 10A TO220AC
5,850
-
Standard
45V
10A
700mV @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1045HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 45V 10A TO220AC
2,538
Automotive, AEC-Q101
Standard
45V
10A
700mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C