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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1085/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
SF41GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 4A DO201AD
3,384
Automotive, AEC-Q101
Standard
50V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF42G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 4A DO201AD
3,366
-
Standard
100V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF42GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 4A DO201AD
4,032
Automotive, AEC-Q101
Standard
100V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF43G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 4A DO201AD
2,808
-
Standard
150V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF43GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 4A DO201AD
7,056
Automotive, AEC-Q101
Standard
150V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF44GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
6,696
Automotive, AEC-Q101
Standard
200V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF45G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 4A DO201AD
3,582
-
Standard
300V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF45GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 4A DO201AD
6,984
Automotive, AEC-Q101
Standard
300V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF46GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
6,930
Automotive, AEC-Q101
Standard
400V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF47G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 4A DO201AD
8,190
-
Standard
500V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF47GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 4A DO201AD
2,862
Automotive, AEC-Q101
Standard
500V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF48GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
4,554
Automotive, AEC-Q101
Standard
600V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF61G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A DO201AD
8,262
-
Standard
50V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF61GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A DO201AD
4,914
Automotive, AEC-Q101
Standard
50V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF62GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A DO201AD
4,644
Automotive, AEC-Q101
Standard
100V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF63G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 6A DO201AD
5,004
-
Standard
150V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF63GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 6A DO201AD
7,380
Automotive, AEC-Q101
Standard
150V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF64GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A DO201AD
6,390
Automotive, AEC-Q101
Standard
200V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF65GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 6A DO201AD
2,700
Automotive, AEC-Q101
Standard
300V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF66GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A DO201AD
4,392
Automotive, AEC-Q101
Standard
400V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF67G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 6A DO201AD
5,670
-
Standard
500V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF67GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 6A DO201AD
8,568
Automotive, AEC-Q101
Standard
500V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF68GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A DO201AD
4,320
Automotive, AEC-Q101
Standard
600V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SR1203HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 12A DO201AD
4,356
Automotive, AEC-Q101
Schottky
30V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
SR1502HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 15A R-6
4,716
Automotive, AEC-Q101
Schottky
20V
15A
550mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
R6, Axial
R-6
-50°C ~ 150°C
SR1503 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 15A R-6
7,794
-
Schottky
30V
15A
550mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
R6, Axial
R-6
-50°C ~ 150°C
SR1503HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 15A R-6
6,588
Automotive, AEC-Q101
Schottky
30V
15A
550mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
R6, Axial
R-6
-50°C ~ 150°C
SR1504HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 15A R-6
2,484
Automotive, AEC-Q101
Schottky
40V
15A
550mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
R6, Axial
R-6
-50°C ~ 150°C
SR203 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 2A DO204AC
7,812
-
Schottky
30V
2A
550mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 125°C
SR203HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 2A DO204AC
4,194
Automotive, AEC-Q101
Schottky
30V
2A
550mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 125°C