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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1093/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
SF1608PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 16A TO247AD
6,048
Automotive, AEC-Q101
Standard
600V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF2001G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 20A TO220AB
4,644
-
Standard
50V
20A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2001GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 20A TO220AB
5,400
Automotive, AEC-Q101
Standard
50V
20A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2001PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 20A TO247AD
5,202
-
Standard
50V
20A
1.1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF2002G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 20A TO220AB
3,222
-
Standard
100V
20A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2002GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 20A TO220AB
6,228
Automotive, AEC-Q101
Standard
100V
20A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2002PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 20A TO247AD
3,942
-
Standard
100V
20A
1.1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF2003G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 20A TO220AB
2,016
-
Standard
150V
20A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2003GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 20A TO220AB
2,466
Automotive, AEC-Q101
Standard
150V
20A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2003PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 20A TO247AD
6,552
-
Standard
150V
20A
1.1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF2004GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 20A TO220AB
3,150
Automotive, AEC-Q101
Standard
200V
20A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2005GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 20A TO220AB
8,658
Automotive, AEC-Q101
Standard
300V
20A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2006GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 20A TO220AB
8,622
Automotive, AEC-Q101
Standard
400V
20A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2007G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 20A TO220AB
3,582
-
Standard
500V
20A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2007GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 20A TO220AB
4,842
Automotive, AEC-Q101
Standard
500V
20A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2007PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 20A TO247AD
7,776
-
Standard
500V
20A
1.9V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF2008G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 20A TO220AB
3,942
-
Standard
600V
20A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2008GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 20A TO220AB
8,262
Automotive, AEC-Q101
Standard
600V
20A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF3001PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 30A TO247AD
4,554
-
Standard
50V
30A
950mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF3001PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 30A TO247AD
8,910
Automotive, AEC-Q101
Standard
50V
30A
950mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF3002PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 30A TO247AD
6,786
-
Standard
100V
30A
950mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF3002PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 30A TO247AD
4,788
Automotive, AEC-Q101
Standard
100V
30A
950mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF3003PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 30A TO247AD
2,628
-
Standard
150V
30A
950mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF3003PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 30A TO247AD
2,178
Automotive, AEC-Q101
Standard
150V
30A
950mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF3004PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 30A TO247AD
7,920
Automotive, AEC-Q101
Standard
200V
30A
950mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF3005PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 30A TO247AD
7,056
-
Standard
300V
30A
1.3V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF3005PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 30A TO247AD
5,418
Automotive, AEC-Q101
Standard
300V
30A
1.3V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF3006PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 30A TO247AD
5,436
Automotive, AEC-Q101
Standard
400V
30A
1.3V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF801G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A TO220AB
4,824
-
Standard
50V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF801GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A TO220AB
6,858
Automotive, AEC-Q101
Standard
50V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C