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시리즈

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다이오드 유형

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전압-DC 역방향 (Vr) (최대)

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전류-평균 정류 (Io)

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전압-순방향 (Vf) (최대) @ If

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속도

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역 복구 시간 (trr)

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전류-역방향 누설 @ Vr

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커패시턴스 @ Vr, F

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장착 유형

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패키지 / 케이스

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공급자 장치 패키지

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필터보기

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글

기록 34,936

페이지 1094/1165

부품 번호	제조업체	설명	재고 있음	시리즈	다이오드 유형	전압-DC 역방향 (Vr) (최대)	전류-평균 정류 (Io)	전압-순방향 (Vf) (최대) @ If	속도	역 복구 시간 (trr)	전류-역방향 누설 @ Vr	커패시턴스 @ Vr, F	장착 유형	패키지 / 케이스	공급자 장치 패키지	작동 온도-접합
SF802G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO220AB	5,058	-	Standard	100V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF802GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO220AB	6,516	Automotive, AEC-Q101	Standard	100V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF803G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 8A TO220AB	5,598	-	Standard	150V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF803GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 8A TO220AB	8,514	Automotive, AEC-Q101	Standard	150V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF804G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A TO220AB	4,554	-	Standard	200V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF804GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A TO220AB	7,182	Automotive, AEC-Q101	Standard	200V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF805G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 8A TO220AB	2,142	-	Standard	300V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF805GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 8A TO220AB	8,964	Automotive, AEC-Q101	Standard	300V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF806G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO220AB	6,516	-	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF806GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO220AB	6,030	Automotive, AEC-Q101	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF807G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 8A TO220AB	5,184	-	Standard	500V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF807GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 8A TO220AB	8,316	Automotive, AEC-Q101	Standard	500V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF808GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AB	5,454	Automotive, AEC-Q101	Standard	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SFA1001G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO220AC	2,070	-	Standard	50V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1001GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO220AC	3,888	Automotive, AEC-Q101	Standard	50V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1002G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A TO220AC	3,348	-	Standard	100V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1002GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A TO220AC	7,236	Automotive, AEC-Q101	Standard	100V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1003G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A TO220AC	7,560	-	Standard	150V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1003GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A TO220AC	2,016	Automotive, AEC-Q101	Standard	150V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1004GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A TO220AC	4,284	Automotive, AEC-Q101	Standard	200V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1005GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A TO220AC	2,556	Automotive, AEC-Q101	Standard	300V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1006G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A TO220AC	7,290	-	Standard	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1006GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A TO220AC	6,894	Automotive, AEC-Q101	Standard	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1007G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 10A TO220AC	3,438	-	Standard	500V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1007GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 10A TO220AC	3,600	Automotive, AEC-Q101	Standard	500V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1008G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO220AC	5,148	-	Standard	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1008GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO220AC	7,146	Automotive, AEC-Q101	Standard	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA801G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A TO220AC	8,172	-	Standard	50V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA801GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A TO220AC	2,484	Automotive, AEC-Q101	Standard	50V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA802G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO220AC	2,358	-	Standard	100V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C

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