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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1105/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
1N5392G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
6,534
-
Standard
100V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5392GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
4,356
Automotive, AEC-Q101
Standard
100V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5393G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
3,598
-
Standard
200V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5393GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
7,920
Automotive, AEC-Q101
Standard
200V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5395G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
8,568
-
Standard
400V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5395GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
3,672
Automotive, AEC-Q101
Standard
400V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5397G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
5,184
-
Standard
600V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5397GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
2,538
Automotive, AEC-Q101
Standard
600V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5398G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
6,624
-
Standard
800V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5398GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
5,418
Automotive, AEC-Q101
Standard
800V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5399G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A DO204AC
6,822
-
Standard
-
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5399GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A DO204AC
4,248
Automotive, AEC-Q101
Standard
-
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5400G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
2,700
-
Standard
50V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5400GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
4,230
Automotive, AEC-Q101
Standard
50V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5401G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
3,960
-
Standard
100V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5401GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
3,454
Automotive, AEC-Q101
Standard
100V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5402G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
5,886
-
Standard
200V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5402GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
8,172
Automotive, AEC-Q101
Standard
200V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5404G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
3,580
-
Standard
400V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5404GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
4,338
Automotive, AEC-Q101
Standard
400V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5406G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
7,776
-
Standard
600V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5406GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
3,564
Automotive, AEC-Q101
Standard
600V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5407G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
6,732
-
Standard
800V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5407GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
8,280
Automotive, AEC-Q101
Standard
800V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5408G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO201AD
6,066
-
Standard
-
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5408GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO201AD
4,626
Automotive, AEC-Q101
Standard
-
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5817 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO204AL
5,292
-
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N5817HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO204AL
8,928
Automotive, AEC-Q101
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N5818 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO204AL
7,020
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N5818HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO204AL
2,772
Automotive, AEC-Q101
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C