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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1106/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
1N5819 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A DO204AL
4,338
-
Schottky
40V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N5819HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A DO204AL
2,574
Automotive, AEC-Q101
Schottky
40V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N5820 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 3A DO201AD
4,068
-
Schottky
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
1N5820HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 3A DO201AD
2,736
Automotive, AEC-Q101
Schottky
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
3,798
-
Schottky
30V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
1N5821HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
2,592
Automotive, AEC-Q101
Schottky
30V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
1N5822 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A DO201AD
3,418
-
Schottky
40V
3A
525mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
1N5822HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A DO201AD
5,238
Automotive, AEC-Q101
Schottky
40V
3A
525mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
2A01G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO204AC
5,958
-
Standard
50V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A01GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO204AC
2,970
Automotive, AEC-Q101
Standard
50V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A02G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO204AC
3,510
-
Standard
100V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A02GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO204AC
8,712
Automotive, AEC-Q101
Standard
100V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A03G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
8,028
-
Standard
200V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A03GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
5,616
Automotive, AEC-Q101
Standard
200V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A04G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
5,436
-
Standard
400V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A04GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
7,866
Automotive, AEC-Q101
Standard
400V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A05G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
5,058
-
Standard
600V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A05GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
2,160
Automotive, AEC-Q101
Standard
600V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A06G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
2,412
-
Standard
800V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A06GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
8,100
Automotive, AEC-Q101
Standard
800V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A07G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO204AC
2,970
-
Standard
-
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A07GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO204AC
8,856
Automotive, AEC-Q101
Standard
-
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
31DF4 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
4,788
-
Standard
400V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
20µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-201AD
-40°C ~ 150°C
31DF6 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
6,858
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
20µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-40°C ~ 150°C
3A100HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO204AC
7,344
Automotive, AEC-Q101
Standard
-
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
27pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
3A60HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO204AC
7,650
Automotive, AEC-Q101
Standard
600V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
27pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
6A05G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A R-6
8,658
-
Standard
50V
6A
1.1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
6A05GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A R-6
2,340
Automotive, AEC-Q101
Standard
50V
6A
1.1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
6A100G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 6A R-6
5,202
-
Standard
1000V
6A
1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
6A100GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 6A R-6
8,910
Automotive, AEC-Q101
Standard
1000V
6A
1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C