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필터보기
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1106/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A DO204AL |
4,338 |
|
- | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 55pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A DO204AL |
2,574 |
|
Automotive, AEC-Q101 | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 55pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 3A DO201AD |
4,068 |
|
- | Schottky | 20V | 3A | 475mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 200pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 3A DO201AD |
2,736 |
|
Automotive, AEC-Q101 | Schottky | 20V | 3A | 475mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 200pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 3A DO201AD |
3,798 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 200pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 3A DO201AD |
2,592 |
|
Automotive, AEC-Q101 | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 200pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 3A DO201AD |
3,418 |
|
- | Schottky | 40V | 3A | 525mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 200pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 3A DO201AD |
5,238 |
|
Automotive, AEC-Q101 | Schottky | 40V | 3A | 525mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 200pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 2A DO204AC |
5,958 |
|
- | Standard | 50V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 2A DO204AC |
2,970 |
|
Automotive, AEC-Q101 | Standard | 50V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO204AC |
3,510 |
|
- | Standard | 100V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO204AC |
8,712 |
|
Automotive, AEC-Q101 | Standard | 100V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO204AC |
8,028 |
|
- | Standard | 200V | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO204AC |
5,616 |
|
Automotive, AEC-Q101 | Standard | 200V | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 2A DO204AC |
5,436 |
|
- | Standard | 400V | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 2A DO204AC |
7,866 |
|
Automotive, AEC-Q101 | Standard | 400V | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A DO204AC |
5,058 |
|
- | Standard | 600V | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A DO204AC |
2,160 |
|
Automotive, AEC-Q101 | Standard | 600V | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 2A DO204AC |
2,412 |
|
- | Standard | 800V | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 2A DO204AC |
8,100 |
|
Automotive, AEC-Q101 | Standard | 800V | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 2A DO204AC |
2,970 |
|
- | Standard | - | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 2A DO204AC |
8,856 |
|
Automotive, AEC-Q101 | Standard | - | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO201AD |
4,788 |
|
- | Standard | 400V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD |
6,858 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 3A DO204AC |
7,344 |
|
Automotive, AEC-Q101 | Standard | - | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 27pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO204AC |
7,650 |
|
Automotive, AEC-Q101 | Standard | 600V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 27pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 6A R-6 |
8,658 |
|
- | Standard | 50V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 6A R-6 |
2,340 |
|
Automotive, AEC-Q101 | Standard | 50V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 6A R-6 |
5,202 |
|
- | Standard | 1000V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 6A R-6 |
8,910 |
|
Automotive, AEC-Q101 | Standard | 1000V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |