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다이오드 유형

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전압-DC 역방향 (Vr) (최대)

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전류-평균 정류 (Io)

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전압-순방향 (Vf) (최대) @ If

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속도

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역 복구 시간 (trr)

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전류-역방향 누설 @ Vr

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커패시턴스 @ Vr, F

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장착 유형

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패키지 / 케이스

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공급자 장치 패키지

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글

기록 34,936

페이지 322/1165

부품 번호	제조업체	설명	재고 있음	시리즈	다이오드 유형	전압-DC 역방향 (Vr) (최대)	전류-평균 정류 (Io)	전압-순방향 (Vf) (최대) @ If	속도	역 복구 시간 (trr)	전류-역방향 누설 @ Vr	커패시턴스 @ Vr, F	장착 유형	패키지 / 케이스	공급자 장치 패키지	작동 온도-접합
S1FLB-GS18	Vishay Semiconductor Diodes Division	DIODE GP 100V 700MA DO219AB	3,636	-	Standard	100V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
S1FLD-GS18	Vishay Semiconductor Diodes Division	DIODE GP 200V 700MA DO219AB	6,750	-	Standard	200V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
S1FLG-GS18	Vishay Semiconductor Diodes Division	DIODE GP 400V 700MA DO219AB	3,598	-	Standard	400V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
S1FLJ-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO219AB	5,346	-	Standard	600V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
BAT86S-TAP	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 200MA DO35	5,238	Automotive, AEC-Q101	Schottky	50V	200mA (DC)	900mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	8pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	125°C (Max)
BAT86S-TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 200MA DO35	2,322	Automotive, AEC-Q101	Schottky	50V	200mA (DC)	900mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	8pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	125°C (Max)
GPP10A-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	3,492	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GPP10B-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL	5,598	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GPP10D-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL	8,910	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GPP10G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL	7,776	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GPP10J-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	7,794	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GPP10M-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL	7,596	-	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1AL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	5,292	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1ALHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	3,816	Automotive, AEC-Q101	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	4,968	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	2,934	Automotive, AEC-Q101	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	5,040	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	6,876	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1GL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	5,130	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1GLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	2,556	Automotive, AEC-Q101	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	8,028	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	8,568	Automotive, AEC-Q101	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
CDSUR4148-HF	Comchip Technology	DIODE GEN PURP 75V 150MA 0603	6,390	-	Standard	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	0603/SOD-523F	125°C (Max)
S1KFP	ON Semiconductor	DIODE GP 800V 1.2A SOD-123HE	7,812	Automotive, AEC-Q101	Standard	800V	1.2A	1.3V @ 1.2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 800V	18pF @ 0V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
S1FLD-M-08	Vishay Semiconductor Diodes Division	DIODE GP 200V 700MA DO219AB	7,938	-	Standard	200V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
S1FLG-M-08	Vishay Semiconductor Diodes Division	DIODE GP 400V 700MA DO219AB	5,544	-	Standard	400V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
S1FLJ-M-08	Vishay Semiconductor Diodes Division	DIODE GP 600V 700MA DO219AB	3,490	-	Standard	600V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
SBRA401T3G	ON Semiconductor	DIODE SCHOTTKY SMA	8,784	*	-	-	-	-	-	-	-	-	-	-	-	-
BA159GHR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	7,074	Automotive, AEC-Q101	Standard	-	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAS19W RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOT323	5,976	-	Standard	100V	200mA	1.25V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C

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