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전압-DC 역방향 (Vr) (최대)

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전류-평균 정류 (Io)

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전압-순방향 (Vf) (최대) @ If

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속도

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역 복구 시간 (trr)

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전류-역방향 누설 @ Vr

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커패시턴스 @ Vr, F

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장착 유형

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글

기록 34,936

페이지 329/1165

부품 번호	제조업체	설명	재고 있음	시리즈	다이오드 유형	전압-DC 역방향 (Vr) (최대)	전류-평균 정류 (Io)	전압-순방향 (Vf) (최대) @ If	속도	역 복구 시간 (trr)	전류-역방향 누설 @ Vr	커패시턴스 @ Vr, F	장착 유형	패키지 / 케이스	공급자 장치 패키지	작동 온도-접합
RS1BHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	8,964	Automotive, AEC-Q101	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1D M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	8,118	-	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1DHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	2,250	Automotive, AEC-Q101	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1G M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	4,140	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1GHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	8,028	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1J M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	2,556	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1JHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	3,744	Automotive, AEC-Q101	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RSFGL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	8,406	-	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFGL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	8,154	-	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	8,532	-	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	2,394	-	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	4,626	-	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	6,012	-	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFML RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	5,274	-	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFML RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	4,968	-	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAS70-04WF	Nexperia	DIODE SCHOTTKY 70V 70MA SC70	8,766	-	Schottky	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 70V	2pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SC-70	150°C (Max)
TSS40U RGG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 200MA 0603	2,124	-	Schottky	40V	200mA	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	5ns	200nA @ 30V	5pF @ 0V, 1MHz	Surface Mount	0201 (0603 Metric)	0603	-65°C ~ 125°C
TSS43U RGG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA 0603	5,652	-	Schottky	30V	200mA	450mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	10pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	0603	-55°C ~ 125°C
RS1DFS MXG	Taiwan Semiconductor Corporation	DIODE, FAST, 1A, 200V	5,670	-	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1DFSHMXG	Taiwan Semiconductor Corporation	DIODE, FAST, 1A, 200V	5,274	Automotive, AEC-Q101	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1GFS MXG	Taiwan Semiconductor Corporation	DIODE, FAST, 1A, 400V	6,894	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1GFSHMXG	Taiwan Semiconductor Corporation	DIODE, FAST, 1A, 400V	5,886	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1JFS MXG	Taiwan Semiconductor Corporation	DIODE, FAST, 1A, 600V	3,942	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1JFSHMXG	Taiwan Semiconductor Corporation	DIODE, FAST, 1A, 600V	4,680	Automotive, AEC-Q101	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1KFS MXG	Taiwan Semiconductor Corporation	DIODE, FAST, 1A, 800V	2,628	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1KFSHMXG	Taiwan Semiconductor Corporation	DIODE, FAST, 1A, 800V	3,598	Automotive, AEC-Q101	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1MFS MXG	Taiwan Semiconductor Corporation	DIODE, FAST, 1A, 1000V	5,310	-	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1MFSHMXG	Taiwan Semiconductor Corporation	DIODE, FAST, 1A, 1000V	3,042	Automotive, AEC-Q101	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
1N5395GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO204AC	6,138	Automotive, AEC-Q101	Standard	400V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
F1T7G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	8,730	-	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C

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