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필터보기
필터 재설정
필터 적용
카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 331/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 800MA SUBSMA |
5,850 |
|
- | Standard | 200V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 800MA SUBSMA |
5,130 |
|
- | Standard | 400V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 800MA SUBSMA |
8,820 |
|
- | Standard | 800V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 500MA SUBSMA |
7,722 |
|
- | Standard | 200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A DO204AL |
6,084 |
|
- | Schottky | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 2A DO204AC |
2,412 |
|
- | Standard | - | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A TS-1 |
3,582 |
|
- | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 100MA DO35 |
5,940 |
|
Automotive, AEC-Q101 | Schottky | 100V | 100mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 100nA @ 100V | 2pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA DO35 |
6,426 |
|
Automotive, AEC-Q101 | Schottky | 30V | 200mA (DC) | 650mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA DO35 |
5,796 |
|
Automotive, AEC-Q101 | Schottky | 30V | 200mA (DC) | 450mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 100MA DO35 |
8,964 |
|
Automotive, AEC-Q101 | Schottky | 100V | 100mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 100nA @ 100V | 2pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA DO35 |
8,658 |
|
Automotive, AEC-Q101 | Schottky | 30V | 200mA (DC) | 450mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 2A DO204AC |
6,480 |
|
Automotive, AEC-Q101 | Standard | 50V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
|
Nexperia |
DIODE SCHOTTKY 40V 200MA SOD323 |
2,484 |
|
- | Schottky | 40V | 200mA (DC) | 550mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 15µA @ 30V | 40pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 125°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 500MA SUB SMA |
3,474 |
|
Automotive, AEC-Q101 | Standard | 50V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 500MA SUB SMA |
6,444 |
|
Automotive, AEC-Q101 | Standard | 50V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 500MA SUBSMA |
3,312 |
|
Automotive, AEC-Q101 | Standard | 100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 500MA SUBSMA |
5,940 |
|
Automotive, AEC-Q101 | Standard | 100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 500MA SUBSMA |
4,770 |
|
Automotive, AEC-Q101 | Standard | 200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 500MA SUBSMA |
8,622 |
|
Automotive, AEC-Q101 | Standard | 200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 200MA 1005 |
3,888 |
|
- | Schottky | 40V | 200mA | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 200nA @ 30V | 5pF @ 0V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -65°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 200A 1005 |
2,124 |
|
- | Schottky | 30V | 200mA | 650mV @ 50mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 200A 1005 |
3,508 |
|
- | Schottky | 30V | 200mA | 450mV @ 15mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 200MA 1005 |
5,562 |
|
- | Schottky | 30V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -65°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 70V 70MA 1005 |
4,932 |
|
- | Schottky | 70V | 70mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 100nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -65°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A TS-1 |
3,366 |
|
- | Standard | 100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A TS-1 |
3,472 |
|
- | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A DO204AL |
5,130 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 55pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GPP 1A 50V DO-214AC |
2,088 |
|
- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 50V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GPP 1A 100V DO-214AC |
2,430 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 100V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |