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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 504/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO214AA |
5,850 |
|
Automotive, AEC-Q101 | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 150V 5A DO27 |
6,876 |
|
- | Schottky | 150V | 5A | 920mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8µA @ 150V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | 175°C (Max) |
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Comchip Technology |
DIODE SCHOTTKY 60V 5A DO214AA |
2,178 |
|
- | Schottky | 60V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 210pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 2A MINISMA |
5,832 |
|
- | Schottky | 40V | 2A | 400mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 160pF @ 4V, 1MHz | Surface Mount | SOD-123T | Mini SMA/SOD-123 | -55°C ~ 125°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 40V 2A MINISMA |
7,560 |
|
- | Schottky | 40V | 2A (DC) | 380mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 160pF @ 4V, 1MHz | Surface Mount | SOD-123T | Mini SMA/SOD-123 | -55°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A R-6 |
3,780 |
|
Automotive, AEC-Q101 | Standard | 400V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A R-6 |
3,780 |
|
Automotive, AEC-Q101 | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 6A R-6 |
5,472 |
|
Automotive, AEC-Q101 | Standard | 800V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A R-6 |
2,052 |
|
Automotive, AEC-Q101 | Standard | 400V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 40V 5A DO214AA |
6,552 |
|
- | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 125°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 40V 5A DO214AA |
5,400 |
|
- | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 125°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 60V 5A DO214AA |
3,762 |
|
- | Schottky | 60V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 210pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A DO214AB |
8,802 |
|
- | Standard | 300V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
3,456 |
|
- | Standard | 400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A DO214AB |
8,712 |
|
- | Standard | 300V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
3,672 |
|
- | Standard | 400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A SMPC4.0 |
6,606 |
|
- | Schottky | 100V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 5A SMPC4.0 |
3,852 |
|
- | Schottky | 120V | 5A | 740mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A SMPC4.0 |
3,528 |
|
- | Schottky | 150V | 5A | 840mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 4A DO201AD |
3,042 |
|
- | Standard | 150V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO201AD |
4,554 |
|
- | Standard | 200V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 40V 3A DO214AB |
2,952 |
|
- | Schottky | 40V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 45V 10A POWERDI5 |
5,130 |
|
SBR® | Super Barrier | 45V | 10A | 550mV @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 380µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD |
8,424 |
|
Automotive, AEC-Q101 | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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|
Torex Semiconductor Ltd |
SCHOTTKY BARRIER DIODE |
3,400 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Torex Semiconductor Ltd |
FAST RECOVERY DIODE |
6,516 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Torex Semiconductor Ltd |
FAST RECOVERY DIODE |
3,294 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Torex Semiconductor Ltd |
FAST RECOVERY DIODE |
2,178 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 250MA DO204 |
2,898 |
|
Automotive, AEC-Q101 | Standard | 2000V | 250mA | 3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 2000V | 3pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2.5KV 250MA DO204 |
5,202 |
|
Automotive, AEC-Q101 | Standard | 2500V | 250mA | 3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 2500V | 3pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |