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필터보기
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 512/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken |
DIODE GEN PURP 400V 1A AXIAL |
5,670 |
|
- | Standard | 400V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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|
Sanken |
DIODE GEN PURP 400V 1A AXIAL |
6,768 |
|
- | Standard | 400V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 400V 1A AXIAL |
8,046 |
|
- | Standard | 400V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 1A AXIAL |
5,652 |
|
- | Standard | 400V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1.5KV 500MA AXIAL |
2,520 |
|
- | Standard | 1500V | 500mA | 2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 1500V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1.5KV 500MA AXIAL |
2,178 |
|
- | Standard | 1500V | 500mA | 2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 1500V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 600MA AXIAL |
5,418 |
|
- | Standard | 600V | 600mA | 1.3V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | 4µs | 5µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 600V 600MA AXIAL |
4,122 |
|
- | Standard | 600V | 600mA | 1.3V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | 4µs | 5µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 800V 600MA AXIAL |
4,860 |
|
- | Standard | 800V | 600mA | 1.3V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | 4µs | 5µA @ 800V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 800V 600MA AXIAL |
3,400 |
|
- | Standard | 800V | 600mA | 1.3V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | 4µs | 5µA @ 800V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 600MA AXIAL |
8,100 |
|
- | Standard | 200V | 600mA | 1.3V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | 4µs | 5µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 600MA AXIAL |
4,860 |
|
- | Standard | 200V | 600mA | 1.3V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | 4µs | 5µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 60V 2A AXIAL |
2,574 |
|
- | Schottky | 60V | 2A | 690mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1.2A AXIAL |
7,002 |
|
- | Standard | 200V | 1.2A | 910mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1.2A AXIAL |
8,838 |
|
- | Standard | 200V | 1.2A | 910mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 250MA AXIAL |
2,088 |
|
- | Standard | 600V | 250mA | 2.5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 250MA AXIAL |
2,430 |
|
- | Standard | 400V | 250mA | 2.5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 250MA AXIAL |
7,830 |
|
- | Standard | 400V | 250mA | 2.5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 30V 3A SJP |
2,358 |
|
- | Schottky | 30V | 3A | 360mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5mA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 125°C |
|
|
|
Sanken |
DIODE SCHOTTKY 40V 3A SJP |
3,526 |
|
- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 500V 3A SJP |
2,178 |
|
- | Standard | 500V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 15µA @ 500V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 30V 3A SJP |
5,544 |
|
- | Schottky | 30V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 2A SJP |
7,830 |
|
- | Standard | 600V | 2A | 1.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 3A SJP |
3,492 |
|
- | Standard | 200V | 3A | 980mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 300V 2A SJP |
8,640 |
|
- | Standard | 300V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 300V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.5A SOD57 |
7,848 |
|
- | Avalanche | 1000V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A SOD57 |
4,716 |
|
- | Avalanche | 800V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.9A SOD57 |
7,344 |
|
- | Avalanche | 200V | 1.9A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.25A SOD57 |
4,104 |
|
- | Avalanche | 800V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 55V 2A SOD57 |
4,284 |
|
- | Avalanche | 55V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 55V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |