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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.5A SOD57 |
5,868 |
|
- | Avalanche | 1000V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A SOD57 |
4,320 |
|
- | Avalanche | 800V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.9A SOD57 |
3,438 |
|
- | Avalanche | 200V | 1.9A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.25A SOD57 |
8,892 |
|
- | Avalanche | 800V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.5A SOD57 |
5,256 |
|
- | Avalanche | 1000V | 1.5A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 55V 2A SOD57 |
3,780 |
|
- | Avalanche | 55V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 55V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 50V SOD-57 |
4,608 |
|
- | Avalanche | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 30V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 50V SOD-57 |
8,946 |
|
- | Avalanche | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 76pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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|
Diodes Incorporated |
DIODE ARRY SBR 60V 8A POWERDI5 |
2,106 |
|
SBR® | Super Barrier | 60V | 8A | 530mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 580µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE ARRY SBR 60V 8A POWERDI5 |
7,848 |
|
SBR® | Super Barrier | 60V | 8A | 530mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 580µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 5A TO277A |
8,316 |
|
Automotive, AEC-Q101, eSMP® | Schottky | 90V | 5A | 880mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15µA @ 90V | 130pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 8A TO277A |
2,952 |
|
eSMP®, TMBS® | Schottky | 150V | 8A | 1.08V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 8A TO277A |
6,786 |
|
eSMP®, TMBS® | Schottky | 150V | 8A | 1.08V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
2,430 |
|
eSMP®, TMBS® | Schottky | 100V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
2,988 |
|
eSMP®, TMBS® | Schottky | 100V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
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|
Bourns |
DIO SBD VRRM 60V 3A SMC |
4,230 |
|
- | Schottky | 60V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 180pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.5A DO220 |
5,508 |
|
eSMP® | Avalanche | 100V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 100V | - | Surface Mount | DO-220AA | DO-220AA (SMP) | - |
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STMicroelectronics |
DIODE SCHOTTKY 40V 1A SMB |
7,866 |
|
Q Automotive | Schottky | 40V | 1A | 650mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12µA @ 40V | - | Surface Mount | DO-214AA, SMB | SMB | -40°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 150V 2A PDI5 |
7,002 |
|
SBR® | Super Barrier | 150V | 2A | 800mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A TO277A |
2,322 |
|
Automotive, AEC-Q101 | Schottky | 40V | 3A | 470mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 40V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A TO277A |
7,506 |
|
Automotive, AEC-Q101 | Schottky | 30V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 30V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5A TO277A |
8,262 |
|
Automotive, AEC-Q101 | Schottky | 50V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 50V | 200pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
4,104 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
8,262 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A DO201AD |
2,268 |
|
- | Standard | 300V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 45pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
8,550 |
|
- | Standard | 50V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 45pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO214AA |
5,526 |
|
- | Schottky | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 100V 3A DO214AB |
5,724 |
|
- | Schottky | 100V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
2,304 |
|
Automotive, AEC-Q101 | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Diodes Incorporated |
DIODE SBR 100V 8A POWERDI5 |
8,694 |
|
Automotive, AEC-Q101 | Super Barrier | 100V | 8A | 880mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 175°C |