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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 516/1165
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 300V 1.9A SOD57 |
6,750 |
|
- | Avalanche | 300V | 1.9A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 300V 1.9A SOD57 |
6,732 |
|
- | Avalanche | 300V | 1.9A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.25A SOD57 |
8,190 |
|
- | Avalanche | 1000V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 100V SOD-57 |
6,408 |
|
- | Avalanche | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 100V SOD-57 |
6,588 |
|
- | Avalanche | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 8A TO277A |
2,682 |
|
Automotive, AEC-Q101, eSMP® | Schottky | 20V | 8A | 570mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 330pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
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|
Bourns |
DIO SBD VRRM 100V 3A SMC |
5,904 |
|
- | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 180pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -55°C ~ 150°C |
|
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Microsemi |
DIODE SCHOTTKY 60V 1A POWERMITE1 |
6,570 |
|
- | Schottky | 60V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 55pF @ 4V, 1MHz | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
|
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|
Sanken |
DIODE GEN PURP 1.5KV 500MA AXIAL |
8,460 |
|
- | Standard | 1500V | 500mA | 2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 1500V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 40V 2A POWERDI123 |
8,604 |
|
Automotive, AEC-Q101 | Schottky | 40V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 40V | 28pF @ 10V, 1MHz | Surface Mount | POWERDI®123 | PowerDI™ 123 | -65°C ~ 125°C |
|
|
|
Comchip Technology |
AUTOMOTIVE DIODE GEN PURP 50V 5A |
5,364 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Comchip Technology |
AUTOMOTIVE DIODE GEN PURP 100V 5 |
3,690 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Comchip Technology |
AUTOMOTIVE DIODE GEN PURP 200V 5 |
8,766 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Comchip Technology |
AUTOMOTIVE DIODE GEN PURP 400V 5 |
4,032 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Comchip Technology |
AUTOMOTIVE DIODE GEN PURP 600V 5 |
3,240 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Comchip Technology |
AUTOMOTIVE DIODE GEN PURP 800V 5 |
2,160 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Comchip Technology |
AUTOMOTIVE DIODE GEN PURP 1000V |
4,392 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 8A DO201AD |
2,628 |
|
- | Schottky | 40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 8A DO201AD |
3,222 |
|
- | Schottky | 40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 100V 20A TO252 |
5,490 |
|
- | Schottky | 100V | 20A | 820mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 4A DO201AD |
5,058 |
|
- | Standard | 400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 4A DO201AD |
2,844 |
|
- | Standard | 400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A DO201AD |
7,596 |
|
- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE SCHOTTKY AUTO 5A 100V |
3,456 |
|
Automotive, AEC-Q101, SWITCHMODE™ | Schottky | 100V | 5A | 710mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.5µA @ 100V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO201AD |
3,276 |
|
- | Standard | 600V | 4A | 1.7V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 |
4,284 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 150V 3A DO214AB |
7,740 |
|
- | Schottky | 150V | 3A | 820mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 150V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 40V 2A PMDU |
4,932 |
|
Automotive, AEC-Q101 | Schottky | 40V | 2A | 560mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 4A DO201AD |
8,244 |
|
Automotive, AEC-Q101 | Standard | 150V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO201AD |
3,708 |
|
Automotive, AEC-Q101 | Standard | 200V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |