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이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
VT760HM3/4W
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 7.5A 60V TO-220AC
7,614
Automotive, AEC-Q101, TMBS®
Schottky
60V
7.5A
800mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 60V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GAP05SLT80-220
GeneSiC Semiconductor
DIODE SCHOTTKY 8KV 50MA AXIAL
5,472
-
Silicon Carbide Schottky
8000V
50mA (DC)
4.6V @ 50mA
No Recovery Time > 500mA (Io)
0ns
3.8µA @ 8000V
25pF @ 1V, 1MHz
Through Hole
Axial
-
-55°C ~ 175°C
CMR5U-02 TR13
Central Semiconductor Corp
DIODE GEN PURP 200V 5A SMC
4,788
-
Standard
200V
5A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
22ns
1µA @ 600V
17pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
VS-1EFH01WHM3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A SMF
3,708
Automotive, AEC-Q101, FRED Pt®
Standard
100V
1A
930mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
16ns
2µA @ 100V
-
Surface Mount
DO-219AB
SMF (DO-219AB)
-65°C ~ 175°C
VS-1EFH02WHM3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A SMF
6,858
Automotive, AEC-Q101, FRED Pt®
Standard
200V
1A
930mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
16ns
2µA @ 200V
-
Surface Mount
DO-219AB
SMF (DO-219AB)
-65°C ~ 175°C
VS-1EFH01W-M3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A SMF
4,032
FRED Pt®
Standard
100V
1A
930mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
16ns
2µA @ 100V
-
Surface Mount
DO-219AB
SMF (DO-219AB)
-65°C ~ 175°C
VS-1EFH02W-M3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A SMF
6,714
FRED Pt®
Standard
200V
1A
930mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
16ns
2µA @ 200V
-
Surface Mount
DO-219AB
SMF (DO-219AB)
-65°C ~ 175°C
1N34A BK
Central Semiconductor Corp
DIODE GEN PURP 75V 50MA DO7
7,362
-
Standard
75V
50mA
1V @ 5mA
Small Signal =< 200mA (Io), Any Speed
-
500µA @ 50V
-
Through Hole
DO-204AA, DO-7, Axial
DO-7
-55°C ~ 75°C
GDP60P120B
Global Power Technologies Group
DIODE SCHOTT 1.2KV 60A TO247-2
7,308
Amp+™
Silicon Carbide Schottky
1200V
60A (DC)
1.7V @ 60A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
3581pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GP2D030A060B
Global Power Technologies Group
DIODE SCHOTTKY 600V 30A TO247-2
7,380
Amp+™
Silicon Carbide Schottky
600V
30A (DC)
1.65V @ 30A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
1581pF @ 1V, 1MHZ
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GP2D050A060B
Global Power Technologies Group
DIODE SCHOTTKY 600V 50A TO247-2
4,860
Amp+™
Silicon Carbide Schottky
600V
50A (DC)
1.65V @ 50A
No Recovery Time > 500mA (Io)
0ns
170µA @ 600V
2635pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GP2D050A120B
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 50A TO247-2
4,014
Amp+™
Silicon Carbide Schottky
1200V
50A (DC)
1.8V @ 50A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
3174pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
C2D05120E-TR
Cree/Wolfspeed
DIODE SCHOTTKY 1.2KV 17.5A TO252
2,322
Zero Recovery™
Silicon Carbide Schottky
1200V
17.5A (DC)
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
200µA @ 1200V
455pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
GDP03S060C
Global Power Technologies Group
DIODE SCHOTTKY 600V 3A TO252-2
6,354
Amp+™
Silicon Carbide Schottky
600V
3A (DC)
1.7V @ 3A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
122pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 135°C
GDP06S060A
Global Power Technologies Group
DIODE SCHOTTKY 600V 6A TO220-2
2,250
Amp+™
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
243pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 135°C
GDP06S060D
Global Power Technologies Group
DIODE SCHOTTKY 600V 6A TO263-2
3,888
Amp+™
Silicon Carbide Schottky
600V
6A
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
243pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 135°C
GDP08S120A
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 8A TO220-2
5,472
Amp+™
Silicon Carbide Schottky
1200V
8A
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
477pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 135°C
GDP12S060A
Global Power Technologies Group
DIODE SCHOTTKY 600V 12A TO220-2
6,732
Amp+™
Silicon Carbide Schottky
600V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
487pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 135°C
GDP12S060D
Global Power Technologies Group
DIODE SCHOTTKY 600V 12A TO263-2
4,482
Amp+™
Silicon Carbide Schottky
600V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
487pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 135°C
GDP15S120A
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 15A TO220-2
2,034
Amp+™
Silicon Carbide Schottky
1200V
15A (DC)
1.7V @ 15A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
895pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 135°C
GDP15S120B
Global Power Technologies Group
DIODE SCHOTTKY 1200V 15A TO247-2
3,582
Amp+™
Silicon Carbide Schottky
1200V
15A (DC)
1.7V @ 15A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
895pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP24P060B
Global Power Technologies Group
DIODE SCHOTTKY 600V 24A TO247-2
2,016
Amp+™
Silicon Carbide Schottky
600V
24A (DC)
1.7V @ 24A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
973pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP30P120B
Global Power Technologies Group
DIODE SCHOTTKY 1200V 81A TO247-2
8,622
Amp+™
Silicon Carbide Schottky
1200V
81A
1.7V @ 30A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
1790pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP30S120B
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 30A TO247-2
7,002
Amp+™
Silicon Carbide Schottky
1200V
30A (DC)
1.7V @ 30A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
1790pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP36Z060B
Global Power Technologies Group
DIODE SCHOTTKY 600V 36A TO247-2
4,482
Amp+™
Silicon Carbide Schottky
600V
36A (DC)
1.7V @ 36A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
1460pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP50P120B
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 50A TO247-2
7,146
Amp+™
Silicon Carbide Schottky
1200V
50A (DC)
1.7V @ 50A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
2984pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP60Z120E
Global Power Technologies Group
DIODE SCHOTT 1.2KV 60A TO247-2
7,614
Amp+™
Silicon Carbide Schottky
1200V
60A (DC)
1.7V @ 60A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
3581pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GP2D005A120A
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 5A TO220-2
5,706
Amp+™
Silicon Carbide Schottky
1200V
5A (DC)
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
10µA @ 1200V
317pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GP2D005A120C
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 5A DPAK-2
3,168
Amp+™
Silicon Carbide Schottky
1200V
5A
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
10µA @ 1200V
317pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-2L (DPAK)
-55°C ~ 175°C
GP2D005A170B
Global Power Technologies Group
DIODE SCHOTTKY 1700V 5A TO247-2
4,860
Amp+™
Silicon Carbide Schottky
1700V
5A (DC)
1.75V @ 5A
No Recovery Time > 500mA (Io)
0ns
10µA @ 1700V
406pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C