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카테고리반도체 / 메모리 IC / 기억
기록 46,590
페이지 438/1553
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설명 |
재고 있음 |
수량 |
시리즈 | 메모리 유형 | 메모리 포맷 | 기술 | 메모리 크기 | 메모리 인터페이스 | 시계 주파수 | 쓰기주기 시간-단어, 페이지 | 접근 시간 | 전압-공급 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TFBGA |
3,544 |
|
- | Volatile | DRAM | SDRAM - Mobile | 128Mb (8M x 16) | Parallel | 166MHz | - | 5.5ns | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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|
Micron Technology Inc. |
IC DRAM 2G PARALLEL 96FBGA |
2,646 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 800MHz | - | 13.75ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (8x14) |
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|
Micron Technology Inc. |
IC FLASH 32G PARALLEL 48TSOP |
8,460 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
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|
Micron Technology Inc. |
IC FLASH 4G PARALLEL 48TSOP1 |
5,922 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TC) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
|
Micron Technology Inc. |
IC DRAM 256M PARALLEL 54TSOP |
4,122 |
|
Automotive, AEC-Q100 | Volatile | DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 167MHz | 12ns | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
Micron Technology Inc. |
IC DRAM 256M PARALLEL 133MHZ |
2,952 |
|
- | Volatile | DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 133MHz | 14ns | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
Micron Technology Inc. |
IC DRAM 256M PARALLEL 54VFBGA |
3,526 |
|
Automotive, AEC-Q100 | Volatile | DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 167MHz | 12ns | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-VFBGA | 54-VFBGA (8x8) |
|
|
|
Micron Technology Inc. |
IC DRAM 256M PARALLEL 54TSOP |
4,356 |
|
- | Volatile | DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 133MHz | 14ns | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TSOP |
6,570 |
|
- | Volatile | DRAM | SDRAM | 128Mb (8M x 16) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
5,282 |
|
- | Volatile | DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 60TFBGA |
3,078 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 128Mb (8M x 16) | Parallel | 166MHz | 15ns | 5.5ns | 1.7V ~ 1.95V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x10) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28SOJ |
3,168 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
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|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28SOJ |
8,568 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 48CABGA |
8,838 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-CABGA (9x9) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 48CABGA |
4,374 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 15ns | 15ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-CABGA (9x9) |
|
|
|
Alliance Memory, Inc. |
IC SRAM 8M PARALLEL 44TSOP II |
5,760 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (1M x 8) | Parallel | - | 45ns | 45ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TFBGA |
6,966 |
|
- | Volatile | DRAM | SDRAM | 128Mb (8M x 16) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
|
|
|
Alliance Memory, Inc. |
IC DRAM 512M PARALLEL 60FBGA |
2,430 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (64M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 105°C (TC) | Surface Mount | 60-TFBGA | 60-FBGA (8x10) |
|
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|
Cypress Semiconductor |
IC SRAM 4M PARALLEL |
7,038 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 45ns | 45ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
Cypress Semiconductor |
IC SRAM 4M PARALLEL |
3,744 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 15ns | 15ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
Alliance Memory, Inc. |
IC DRAM 512M PARALLEL 90FBGA |
3,546 |
|
- | Volatile | DRAM | SDRAM - Mobile SDRAM | 512Mb (16M x 32) | Parallel | 166MHz | 15ns | 5.4ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-FBGA (8x13) |
|
|
|
Alliance Memory, Inc. |
IC DRAM 512M PARALLEL 54FBGA |
2,952 |
|
- | Volatile | DRAM | SDRAM - Mobile SDRAM | 512Mb (32M x 16) | Parallel | 166MHz | - | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TJ) | Surface Mount | 54-VFBGA | 54-FBGA (8x8) |
|
|
|
Alliance Memory, Inc. |
IC DRAM 256M PARALLEL 90FBGA |
6,948 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 166MHz | 15ns | 5.5ns | 1.14V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-FBGA (8x13) |
|
|
|
Renesas Electronics America |
IC SRAM 4M PARALLEL 32SOP |
656 |
|
- | Volatile | SRAM | SRAM | 4Mb (512K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.450", 11.40mm Width) | 32-SOP |
|
|
|
Microchip Technology |
IC EPROM 2M PARALLEL 44PLCC |
8,028 |
|
- | Non-Volatile | EPROM | EPROM - OTP | 2Mb (128K x 16) | Parallel | - | - | 90ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 44-LCC (J-Lead) | 44-PLCC (16.6x16.6) |
|
|
|
Micron Technology Inc. |
IC DRAM 64M PARALLEL 86TSOP II |
8,154 |
|
- | Volatile | DRAM | SDRAM | 64Mb (2M x 32) | Parallel | 167MHz | 12ns | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC PSRAM 64M PARALLEL 48TFBGA |
2,412 |
|
- | Volatile | PSRAM | PSRAM (Pseudo SRAM) | 64Mb (4M x 16) | Parallel | - | 70ns | 70ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC PSRAM 64M PARALLEL 48BGA |
3,562 |
|
- | Volatile | PSRAM | PSRAM (Pseudo SRAM) | 64Mb (4M x 16) | Parallel | - | 70ns | 70ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 2M PARALLEL 44LQFP |
4,230 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 2Mb (128K x 16) | Parallel | - | 10ns | 10ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-LQFP | 44-LQFP (10x10) |
|
|
|
Cypress Semiconductor |
IC SRAM 4M PARALLEL 44SOJ |
2,646 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |