트랜지스터-FET, MOSFET-어레이
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-어레이
기록 3,829
페이지 40/128
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | FET 기능 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | 입력 커패시턴스 (Ciss) (최대) @ Vds | 전력-최대 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Advanced Linear Devices Inc. |
MOSFET 2N/2P-CH 10.6V 14SOIC |
7,572 |
|
- | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Diodes Incorporated |
MOSFET N/P-CH 60V 8SOIC |
17,100 |
|
- | N and P-Channel | Logic Level Gate | 60V | 3.6A, 2.6A | 55mOhm @ 4.5A, 10V | 1V @ 250µA (Min) | 20.4nC @ 10V | 1063pF @ 30V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8SOIC |
5,940 |
|
- | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
6,720 |
|
- | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
6,540 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
6,288 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
6,156 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
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|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
6,192 |
|
EPAD® | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
5,436 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 20mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
6,354 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
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Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8SOIC |
4,158 |
|
- | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Advanced Linear Devices Inc. |
MOSFET 2N/2P-CH 10.6V 14SOIC |
6,180 |
|
- | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | 40mA, 16mA | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
8,892 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 10mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
8,604 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
8,460 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Sanken |
MOSFET 6N-CH 500V 5A 15-SIP |
4,878 |
|
- | 6 N-Channel (3-Phase Bridge) | Standard | 500V | 5A | 1.4Ohm @ 2.5A, 10V | 4V @ 1mA | - | 770pF @ 10V | 5W | 150°C (TJ) | Through Hole | 15-SIP Exposed Tab, Formed Leads | 15-ZIP |
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Infineon Technologies |
MOSFET 2 N-CH 1200V 50A MODULE |
4,356 |
|
CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23mOhm @ 50A, 15V | 5.55V @ 20mA | 125nC @ 15V | 3950pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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Rohm Semiconductor |
MOSFET 2N-CH 1200V 180A MODULE |
8,424 |
|
- | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 204A (Tc) | - | 4V @ 35.2mA | - | 23000pF @ 10V | 1130W | -40°C ~ 150°C (TJ) | - | Module | Module |
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Texas Instruments |
MOSFET 2N-CH 30V 10PICOSTAR |
13,176 |
|
NexFET™ | 2 N-Channel (Dual) Common Drain | Logic Level Gate | - | - | - | 2.3V @ 250µA | 40nC @ 10V | - | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 10-XFLGA | 10-Picostar (3.37x1.47) |
|
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Texas Instruments |
MOSFET 2N-CH 30V 30A 5PTAB |
7,572 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 30A | 7.7mOhm @ 25A, 8V | 1.9V @ 250µA | 9.2nC @ 4.5V | 1150pF @ 15V | 8W | -55°C ~ 150°C (TJ) | Surface Mount | 5-LGA | 5-PTAB (5x3.5) |
|
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|
Sanken |
MOSFET 3N/3P-CH 35V 8A 15-SIP |
6,948 |
|
- | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | 35V | 8A | - | - | - | - | - | - | Through Hole | 15-SIP Exposed Tab, Formed Leads | 15-ZIP |
|
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|
Sanken |
MOSFET 3N/3P-CH 500V 2.5A 12-SIP |
6,696 |
|
- | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | 500V | 2.5A | - | - | - | - | - | - | Through Hole | 12-SIP | 12-SIP |
|
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|
Sanken |
MOSFET 6N-CH 250V 7A 12-SIP |
7,020 |
|
- | 6 N-Channel (3-Phase Bridge) | Standard | 250V | 7A | 250mOhm @ 3.5A, 10V | 4V @ 1mA | - | 850pF @ 10V | 4W | 150°C (TJ) | Through Hole | 12-SIP | 12-SIP |
|
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|
Microsemi |
MOSFET 4N-CH 500V 26A SP3 |
5,202 |
|
- | 4 N-Channel (H-Bridge) | Standard | 500V | 26A | 168mOhm @ 13A, 10V | 5V @ 1mA | 72nC @ 10V | 3259pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
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|
Microsemi |
MOSFET 2N-CH 600V 95A SP3 |
4,248 |
|
CoolMOS™ | 2 N Channel (Dual Buck Chopper) | Super Junction | 600V | 95A | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
|
Microsemi |
MOSFET 4N-CH 500V 51A SP3 |
4,914 |
|
- | 4 N-Channel (H-Bridge) | Standard | 500V | 51A | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
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|
Microsemi |
MOSFET 4N-CH 500V 46A SP4 |
8,964 |
|
- | 4 N-Channel (H-Bridge) | Standard | 500V | 46A | 90mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
|
Microsemi |
MOSFET 4N-CH 1000V 18A SP4 |
4,356 |
|
- | 4 N-Channel (H-Bridge) | Standard | 1000V (1kV) | 18A | 540mOhm @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
|
Microsemi |
MOSFET 2N-CH 500V 90A SP4 |
6,948 |
|
- | 2 N-Channel (Half Bridge) | Standard | 500V | 90A | 45mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
|
Diodes Incorporated |
MOSFET N/P-CH 30V 6.8A/4.9A 8SO |
16,632 |
|
- | N and P-Channel | Logic Level Gate, 4.5V Drive | 30V | 6.8A, 4.9A | 24mOhm @ 7A, 10V | 3V @ 250µA | 12.9nC @ 10V | 608pF @ 15V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |