트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 142/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 600V 31A TO220-3 |
7,716 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220SIS |
8,550 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | ±30V | 2400pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 300V 38A TO-220PAK |
9,528 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 69mOhm @ 24A, 10V | 5V @ 250µA | 125nC @ 10V | ±20V | 5168pF @ 50V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 12A TO-220 |
13,656 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 299mOhm @ 6A, 10V | 5V @ 250µA | 45nC @ 10V | ±25V | 1250pF @ 100V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CHANNEL 850V 14A TO220 |
8,208 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 14A (Tc) | 10V | 550mOhm @ 7A, 10V | 5.5V @ 1mA | 30nC @ 10V | ±30V | 1043pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 850V 14A TO220AB |
7,008 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 14A (Tc) | 10V | 550mOhm @ 500mA, 10V | 5.5V @ 1mA | 30nC @ 10V | ±30V | 1043pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB (IXFP) | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 32A I2PAK |
20,544 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 32A (Tc) | 10V | 99mOhm @ 16A, 10V | 4V @ 250µA | 56.5nC @ 10V | ±25V | 2355pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 250V 25A TO-220F |
22,470 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 42.5mOhm @ 25A, 10V | 5V @ 250µA | 101nC @ 10V | ±30V | 7280pF @ 25V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 37A TO-247 |
7,020 |
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HiPerFET™, Polar™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 104mOhm @ 18.5A, 10V | 5V @ 250µA | 139nC @ 10V | ±20V | 5950pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 23A TO-247AC |
6,180 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 23A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 3400pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 600V 22A TO-220F |
21,024 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 165mOhm @ 11A, 10V | 4V @ 250µA | 45nC @ 10V | ±45V | 1950pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CHANNEL 250V 30A TO220 |
6,312 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 30A (Tc) | 10V | 60mOhm @ 15A, 10V | 4.5V @ 500µA | 21nC @ 10V | ±20V | 1450pF @ 25V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 950V 8A TO-247 |
15,936 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 5V @ 100µA | 22nC @ 10V | ±30V | 630pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 40A TO220AB |
12,606 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 40A (Tc) | 6V, 10V | 60mOhm @ 20A, 10V | 4V @ 250µA | 140nC @ 10V | ±30V | 5000pF @ 25V | - | 3.75W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 950V 7.2A TO-220 |
12,390 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 950V | 7.2A (Tc) | 10V | 1.35Ohm @ 3.6A, 10V | 5V @ 100µA | 34nC @ 10V | ±30V | 1031pF @ 100V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO-247AC |
9,540 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | ±20V | 10315pF @ 25V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 30A TO220 |
8,484 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96nC @ 10V | ±20V | 2127pF @ 100V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 30A TO220-FP |
9,864 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96nC @ 10V | ±20V | 2127pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 35A TO247 |
9,024 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 5V @ 1mA | 72nC @ 10V | ±20V | 3000pF @ 25V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 800V 9A TO-220FP |
17,148 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 9A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 5V @ 100µA | 22nC @ 10V | ±30V | 635pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 80V 100A TO220-3 |
11,760 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 2.8mOhm @ 100A, 10V | 3.5V @ 270µA | 206nC @ 10V | ±20V | 14200pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET NCH 40V 240A D2PAK |
21,984 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 4.5V, 10V | 0.75mOhm @ 100A, 10V | 2.4V @ 250µA | 266nC @ 4.5V | ±16V | 16488pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 600V 30A TO247 |
12,660 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96nC @ 10V | ±20V | 2127pF @ 100V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 85A TO220AB |
12,516 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 21mOhm @ 30A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 4750pF @ 25V | - | 2.4W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 46A TO-247AC |
7,344 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 46A (Tc) | 10V | 55mOhm @ 28A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 5200pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET P-CH 150V 44A TO-3P |
8,712 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 44A (Tc) | 10V | 65mOhm @ 500mA, 10V | 4V @ 250µA | 175nC @ 10V | ±15V | 13400pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220FP-3 |
7,512 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70nC @ 10V | ±20V | 3330pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 120A TO-220-3 |
12,180 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2mOhm @ 100A, 10V | 4.5V @ 250µA | 268nC @ 10V | ±20V | 20930pF @ 30V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 18A TO-247 |
6,066 |
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FDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 200mOhm @ 9A, 10V | 5V @ 250µA | 29nC @ 10V | ±25V | 1055pF @ 100V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-220-3 |
9,132 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |