트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 147/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET P-CH 30V 2.5A SOT23-3 |
50,238 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 10V | 78mOhm @ 3.2A, 10V | 3V @ 250µA | 15nC @ 10V | ±20V | 380pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 38A SO8FL |
12,624 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.2A (Ta), 38A (Tc) | 4.5V, 10V | 9.1mOhm @ 30A, 10V | 2.1V @ 250µA | 15.2nC @ 10V | ±20V | 770pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 80A 8PDFN |
24,414 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 11.1nC @ 4.5V | ±20V | 1210pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
27,978 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 100mOhm @ 2A, 4.5V | 1.5V @ 1mA | 3.9nC @ 4.5V | ±12V | 175pF @ 10V | Schottky Diode (Isolated) | 900mW (Ta) | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Rohm Semiconductor |
MOSFET N-CH 30V 1.5A TUMT5 |
50,214 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 2.5V, 4.5V | 240mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 2.2nC @ 4.5V | 12V | 80pF @ 10V | Schottky Diode (Isolated) | 1W (Ta) | 150°C (TJ) | Surface Mount | TUMT5 | 6-SMD (5 Leads), Flat Lead |
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Rohm Semiconductor |
MOSFET P-CH 12V 4.5A TSST8 |
28,350 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 4.5A (Ta) | 1.5V, 4.5V | 30mOhm @ 4.5A, 4.5V | 1V @ 1mA | 40nC @ 4.5V | -8V | 4200pF @ 6V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount | 8-TSST | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET P-CH 12V 4.5A TSMT6 |
22,728 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 4.5A (Ta) | 1.5V, 4.5V | 35mOhm @ 4.5A, 4.5V | 1V @ 1mA | 31nC @ 4.5V | ±10V | 2450pF @ 6V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Nexperia |
MOSFET N-CH 55V 18A DPAK |
53,154 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 77mOhm @ 10A, 10V | 4V @ 1mA | - | ±20V | 422pF @ 25V | - | 51W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
PSMN5R4-25YLD/LFPAK/REEL 7 Q1 |
14,916 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 70A (Tc) | 4.5V, 10V | 5.69mOhm @ 15A, 10V | 2.2V @ 1mA | 12.4nC @ 10V | ±20V | 858pF @ 12V | Schottky Diode (Body) | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 3.5A 8SOP |
20,172 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 3.5A (Ta) | 4.5V, 10V | 155mOhm @ 3.5A, 10V | 1V @ 250µA | 6nC @ 10V | ±20V | 540pF @ 30V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 124A 8PDFN |
22,446 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 124A (Tc) | 4.5V, 10V | 3.6mOhm @ 22A, 10V | 2.5V @ 250µA | 50nC @ 10V | ±20V | 2530pF @ 15V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 25V LFPAK |
15,456 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 73A (Tc) | 4.5V, 10V | 6.1mOhm @ 20A, 10V | 1.95V @ 1mA | 19.3nC @ 10V | ±20V | 1099pF @ 12V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 32A 8SOP |
23,784 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta) | 4.5V, 10V | 11mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | ±20V | 660pF @ 15V | - | 1.6W (Ta), 21W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 30V 21A PT8 |
28,572 |
|
PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 49A (Tc) | 4.5V, 10V | 3.5mOhm @ 21A, 10V | 3V @ 1mA | 47nC @ 10V | ±20V | 3000pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 9.6A DPAK |
24,828 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 25nC @ 11.5V | ±20V | 1456pF @ 12V | - | 1.4W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 60V 47A LFPAK33 |
13,362 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 47A (Ta) | 5V, 10V | 13mOhm @ 10A, 10V | 2.45V @ 1mA | 17nC @ 5V | ±10V | 2230pF @ 25V | - | 75W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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ON Semiconductor |
MOSFET N-CH 30V 6-MLP 2X2 |
49,158 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 15mOhm @ 11A, 10V | 3V @ 250µA | 22nC @ 10V | ±20V | 1360pF @ 15V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
25,104 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 108A 8PDFN |
26,070 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 108A (Tc) | 4.5V, 10V | 4.5mOhm @ 18A, 10V | 2.5V @ 250µA | 19nC @ 10V | ±20V | 1194pF @ 15V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CHANNEL 30V 9.5A 8SOP |
20,676 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta) | 10V | 14.6mOhm @ 9.5A, 10V | 2.5V @ 1mA | 8.3nC @ 4.5V | ±20V | 680pF @ 15V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET NCH 60V 50A TO252 |
22,800 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 23mOhm @ 12A, 10V | 3V @ 250µA | 20.1nC @ 10V | ±20V | 1143pF @ 25V | - | 2.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Vishay Siliconix |
MOSFET N-CH 40V 30A POWERPAKSO-8 |
27,012 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Tc) | 4.5V, 10V | 7mOhm @ 8A, 10V | 2.5V @ 250µA | 35nC @ 10V | ±20V | 1800pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET N-CH 75V 33A DPAK |
64,830 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 33A (Tc) | 10V | 29mOhm @ 12A, 10V | 2.8V @ 1mA | 34nC @ 10V | ±16V | 2000pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 6.5A SOP8 |
21,168 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4V, 10V | 27mOhm @ 6.5A, 10V | 2.5V @ 1mA | 8.6nC @ 5V | ±20V | 430pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Panasonic Electronic Components |
MOSFET N-CH 30V 12A 8HSSO |
23,274 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 39A (Tc) | 4.5V, 10V | 7.1mOhm @ 8.5A, 10V | 3V @ 1.45mA | 10nC @ 4.5V | ±20V | 1680pF @ 10V | - | 2W (Ta), 19W (Tc) | 150°C (TJ) | Surface Mount | HSSO8-F1-B | 8-PowerSMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 50A DP TO252-3 |
29,028 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta) | 4.5V, 10V | 8.7mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
PCH -30V -5.5A MIDDLE POWER MOSF |
42,432 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 5.5A (Tc) | 10V | 24.5mOhm @ 5.5A, 10V | 2.5V @ 1mA | 18.8nC @ 10V | ±20V | 860pF @ 15V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 91A 8PDFN |
22,080 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 91A (Tc) | 4.5V, 10V | 7mOhm @ 14A, 10V | 2.5V @ 250µA | 23.5nC @ 10V | ±20V | 1469pF @ 20V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 55V 55A DPAK |
100,158 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 55A (Tc) | 10V | 19mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 2108pF @ 25V | - | 114W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET NCH 60V 5.7A POWERDI |
26,130 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 5.7A (Ta), 24A (Tc) | 4.5V, 10V | 50mOhm @ 5.1A, 10V | 3V @ 250µA | 8.8nC @ 10V | ±20V | 584pF @ 25V | - | 1.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |