트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 153/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CHAN 500V DPAK |
46,080 |
|
E | N-Channel | MOSFET (Metal Oxide) | 550V | 10.5A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | 886pF @ 100V | - | 114W (Tc) | -55°C ~ 150°C (TA) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 100V 32A TO220AB |
19,026 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 24mOhm @ 16A, 10V | 4.5V @ 250µA | 19nC @ 10V | ±20V | 1270pF @ 50V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N CH 500V 22A D2PAK |
12,654 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 130mOhm @ 11A, 10V | 4V @ 250µA | 62.5nC @ 10V | ±25V | 1973pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 57A D2PAK |
20,820 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 15mOhm @ 49A, 10V | 4.5V @ 250µA | 69nC @ 10V | ±20V | 4760pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
Vishay Siliconix |
MOSFET N-CHANNEL 600V 9A DPAK |
24,258 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 368mOhm @ 4.5A, 10V | 4.5V @ 250µA | 52nC @ 10V | ±30V | 778pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 76A D2PAK |
20,988 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 76A (Tc) | 10V | 13mOhm @ 76A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 4500pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
Vishay Siliconix |
MOSFET N-CH 600V 7A TO-252 |
14,418 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Vishay Siliconix |
MOSFET P-CH 100V 4A D2PAK |
18,624 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N-CH 800V 2.5A TO220FP |
31,914 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 3.5Ohm @ 1A, 10V | 5V @ 100µA | 9.5nC @ 10V | 30V | 130pF @ 100V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET N-CH 55V 77A TO220-3 |
15,936 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 77A (Tc) | 10V | 12mOhm @ 38A, 10V | 4V @ 93µA | 60nC @ 10V | ±20V | 1770pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 6A TO-220FM |
12,036 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 1.2Ohm @ 3A, 10V | 4.5V @ 1mA | 15nC @ 10V | ±30V | 520pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 14A D2PAK |
22,260 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 340mOhm @ 7A, 10V | 5V @ 250µA | 26nC @ 10V | ±30V | 866pF @ 100V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 130A TO-220AB |
25,134 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 130A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 15A 4VSON |
29,676 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 130mOhm @ 4.4A, 10V | 4V @ 440µA | 35nC @ 10V | ±20V | 1670pF @ 400V | - | 102W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 11A ITO220 |
34,170 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 11A (Tc) | 10V | 380mOhm @ 3.3A, 10V | 4V @ 250µA | 18.8nC @ 10V | ±30V | 981pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Nexperia |
MOSFET N-CH 100V SIL3 |
26,916 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tj) | 10V | 7.8mOhm @ 25A, 10V | 4V @ 1mA | 128nC @ 10V | ±20V | 7110pF @ 50V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 5A IPAK |
30,000 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 1Ohm @ 2.5A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 400pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Nexperia |
MOSFET N-CH 60V 130A TO-220 |
27,480 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 130A (Tc) | 4.5V, 10V | 3.4mOhm @ 25A, 10V | 2.1V @ 1mA | 95nC @ 5V | ±20V | 10115pF @ 25V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 100V 97A TO-220AB |
20,472 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4820pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Nexperia |
MOSFET N-CH 30V 120A I2PAK |
32,010 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 1.3mOhm @ 25A, 10V | 2.2V @ 1mA | 243nC @ 10V | ±20V | 14850pF @ 15V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 96A TO-220AB |
12,882 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 88A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 18A TO220 |
28,302 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1273pF @ 100V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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Taiwan Semiconductor Corporation |
MOSFET N-CH 100V 160A TO220 |
29,970 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Tc) | 10V | 5.5mOhm @ 30A, 10V | 4V @ 250µA | 154nC @ 10V | ±20V | 9840pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 49V 80A TO-220-7 |
12,024 |
|
TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 49V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232nC @ 10V | ±20V | 4800pF @ 25V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-1 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
|
|
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 18A ITO220 |
27,696 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1273pF @ 100V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
|
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|
Nexperia |
MOSFET N-CH 120V 70A TO-220 |
31,128 |
|
- | N-Channel | MOSFET (Metal Oxide) | 120V | 70A (Tc) | 10V | 6.7mOhm @ 25A, 10V | 4V @ 1mA | 207.1nC @ 10V | ±20V | 11384pF @ 60V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 120A TO-262 |
7,980 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6920pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 18A TO247-3 |
7,632 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Nexperia |
MOSFET N-CH 30V 100A TO220AB |
31,038 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.7mOhm @ 25A, 10V | 2.15V @ 1mA | 212nC @ 10V | ±20V | 12493pF @ 12V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Nexperia |
MOSFET N-CH 80V 100A TO220AB |
21,774 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 4.1mOhm @ 15A, 10V | 4V @ 1mA | 125nC @ 10V | ±20V | 8400pF @ 40V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |