트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 156/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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STMicroelectronics |
N-CHANNEL 600 V 0.110 OHM TYP. 2 |
7,332 |
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MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 195mOhm @ 9A, 10V | 4.75V @ 250µA | 24nC @ 10V | ±25V | 940pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-247 |
6,180 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 195A |
18,312 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 1.95mOhm @ 100A, 10V | 2.4V @ 250µA | 255nC @ 4.5V | ±20V | 15330pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
21,276 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42nC @ 10V | ±30V | 1036pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
18,528 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 24A TO-220 |
17,928 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 4V @ 250µA | 37nC @ 10V | ±25V | 1370pF @ 100V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 26A TO-247 |
18,852 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 125mOhm @ 13A, 10V | 4V @ 250µA | 45.5nC @ 10V | ±25V | 1781pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
25,590 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V TO-220AB-3 |
22,044 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4.5V @ 250µA | 203nC @ 10V | ±20V | 13280pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 800V 8A TO-220FM |
19,692 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Ta) | 10V | 1.03Ohm @ 4A, 10V | 5V @ 1mA | 39nC @ 10V | ±30V | 1080pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 31A TO220 |
20,100 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 23A TO247AC |
16,932 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±30V | 2418pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TA) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 12A TO-220AB |
11,136 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48nC @ 10V | ±30V | 1375pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 560V 21A TO-247 |
8,148 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 27A D2PAK |
13,110 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 27A (Tc) | 10V | 98mOhm @ 13.5A, 10V | 5V @ 250µA | 83nC @ 10V | ±25V | 3750pF @ 100V | - | 160W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 25A TO220 |
23,076 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | 5V @ 250µA | 75nC @ 10V | ±30V | 2274pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 25A TO220AB |
20,280 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | 5V @ 250µA | 75nC @ 10V | ±30V | 2274pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 1000V 4.3A TO-247AC |
8,976 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 4.3A (Tc) | 10V | 3.5Ohm @ 2.6A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 1600pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 800V 15A TO220AB |
20,508 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2408pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 22A POWERPAK8 |
28,668 |
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E | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 147mOhm @ 10A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 2063pF @ 100V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 650V 32A TO220 |
21,336 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 32A (Tc) | 10V | 99mOhm @ 16A, 10V | 4V @ 250µA | 56.5nC @ 10V | ±25V | 2355pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 15A TO3PF |
7,860 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 300mOhm @ 7.5A, 10V | 4.15V @ 1mA | 50nC @ 10V | ±30V | 1700pF @ 25V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 100A TO220 |
6,840 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 10V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 9000pF @ 40V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO220 |
7,236 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 4V @ 1mA | 85nC @ 10V | ±30V | 2100pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 400V 11A TO-247AC |
9,264 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 11A (Tc) | 10V | 550mOhm @ 6.6A, 10V | 4V @ 250µA | 62nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 25A TO247AC |
10,056 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | 5V @ 250µA | 75nC @ 10V | ±30V | 2274pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 30A TO-247AC |
1,095 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 96nC @ 10V | ±30V | 2550pF @ 100V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 49V 80A TO220-7 |
9,420 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 49V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232nC @ 10V | ±20V | 4800pF @ 25V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | PG-TO220-7-12 | TO-220-7 |
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STMicroelectronics |
NCHANNEL 600 V 105 MOHM TYP. 26 |
8,460 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET NCH 200V 72A D2PAK |
7,589 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 22mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |