트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 158/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET |
16,716 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 79mOhm @ 20A, 10V | 5V @ 250µA | 70nC @ 10V | ±25V | 3250pF @ 100V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 46A TO247AC |
8,208 |
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E | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 73mOhm @ 22A, 10V | 4V @ 250µA | 278nC @ 10V | ±30V | 5892pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 47A TO247AC |
8,832 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 67mOhm @ 24A, 10V | 4V @ 250µA | 225nC @ 10V | ±30V | 4854pF @ 100V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS-RF |
MOSFET N-CH 1000V 6A TO268 |
6,396 |
|
HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 6A (Tc) | 10V | 1.9Ohm @ 3A, 10V | 5.5V @ 2.5mA | 54nC @ 10V | ±20V | 1770pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 (IXFT) | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
MOSFET N-CH 600V 42A TO247-4 |
16,632 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 10V | 70mOhm @ 21A, 10V | 4V @ 250µA | 70nC @ 10V | ±25V | 3060pF @ 100V | - | 300W (Tc) | 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
MOSFET N-CH 600V 76A TO247 |
8,160 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 42mOhm @ 44.4A, 10V | 4V @ 1mA | 260nC @ 10V | ±20V | 6500pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 34A TO-247 |
19,068 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57nC @ 10V | ±25V | 2500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
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|
STMicroelectronics |
MOSFET N-CH 800V 19.5A TO247 |
11,772 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 19.5A (Tc) | 10V | 260mOhm @ 19.5A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 64A TO247AD |
10,404 |
|
E | N-Channel | MOSFET (Metal Oxide) | 650V | 64A (Tc) | 10V | 47mOhm @ 30.5A, 10V | 4V @ 250µA | 371nC @ 10V | ±30V | 7407pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 64A TO247AC |
8,628 |
|
E | N-Channel | MOSFET (Metal Oxide) | 650V | 64A (Tc) | 10V | 47mOhm @ 30.5A, 10V | 4V @ 250µA | 371nC @ 10V | ±30V | 7407pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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|
GeneSiC Semiconductor |
TRANS SJT 1200V 25A |
17,196 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 25A (Tc) | - | 120mOhm @ 10A | - | - | - | 1403pF @ 800V | - | 170W (Tc) | 175°C (TJ) | Surface Mount | - | - |
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STMicroelectronics |
MOSFET N-CH 600V 40A ISOTOP |
8,460 |
|
PowerMESH™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 130mOhm @ 20A, 10V | 4V @ 250µA | 430nC @ 10V | ±30V | 11100pF @ 25V | - | 460W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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STMicroelectronics |
MOSFET N-CH 1.2KV TO247-3 |
13,392 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 65A (Tc) | 20V | 69mOhm @ 40A, 20V | 3V @ 1mA | 122nC @ 20V | +25V, -10V | 1900pF @ 400V | - | 318W (Tc) | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1700V 8A TO-247AB |
14,616 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 8A (Tc) (90°C) | - | 250mOhm @ 8A | - | - | - | - | - | 48W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
141,504 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS=30 |
65,454 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
81,390 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
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Micro Commercial Co |
N-CHANNEL MOSFETSOT-23 |
262,320 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA | 4.5V, 10V | 6Ohm @ 250mA, 10V | 2.5V @ 250µA | 2nC @ 10V | ±20V | 60pF @ 25V | - | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
N-CHANNELMOSFETSOT-23 |
226,386 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 220mA | 4.5V, 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
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Micro Commercial Co |
N-CHANNELMOSFETSOT-23 |
256,818 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2.8V @ 250µA | 2nC @ 10V | ±20V | 60pF @ 25V | - | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
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Micro Commercial Co |
N-CHANNEL,MOSFETS,SOT-23 PACKAGE |
269,946 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 340mA | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 40pF @ 10V | - | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
N-CHANNEL,MOSFETS,SOT-323 PACKAG |
156,894 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 340mA | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 40pF @ 10V | - | 200mW | -55°C ~ 150°C | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
X34 PB-F SMALL LOW ON RESISTANCE |
48,666 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 8.5pF @ 3V | - | 150mW (Ta) | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
|
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Diodes Incorporated |
MOSFET N-CH 60V 400MA SOT323 |
82,560 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 1.8V, 5V | 2Ohm @ 50mA, 5V | 1V @ 250µA | 0.4nC @ 4.5V | ±20V | 28.5pF @ 30V | - | 440mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
|
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23 |
83,682 |
|
Automotive, AEC-Q101, SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2.3V @ 26µA | 1.5nC @ 10V | ±20V | 56pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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|
Nexperia |
NX7002BKH/SOT8001/DFN0606-3 |
225,582 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Ta) | 4.5V, 10V | 2.8Ohm @ 200mA, 10V | 2.1V @ 250µA | 1nC @ 10V | ±20V | 22.2pF @ 30V | - | 380mW (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN0606-3 (SOT8001) | 3-XFDFN |
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|
Nexperia |
PMH1200UPE/SOT8001/DFN0606-3 |
195,156 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 520mA | 1.5V, 4.5V | 1.6Ohm @ 410mA, 4.5V | 0.95V @ 250µA | 1nC @ 5V | ±10V | 33pF @ 15V | - | 380mW (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN0606-3 (SOT8001) | 3-XFDFN |
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Nexperia |
PMH550UNE/SOT8001/DFN0606-3 |
185,292 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 770mA (Ta) | 1.5V, 4.5V | 670mOhm @ 770mA, 4.5V | 0.95V @ 250µA | 0.4nC @ 4V | ±8V | 30.3pF @ 15V | - | 380mW (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN0606-3 (SOT8001) | 3-XFDFN |
|
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|
Nexperia |
PMH600UNE/SOT8001/DFN0606-3 |
194,256 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.2V, 4.5V | 620mOhm @ 600mA, 4.5V | 0.95V @ 250µA | 0.31nC @ 4.5V | ±8V | 21.3pF @ 10V | - | 370mW (Ta), 2.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN0606-3 (SOT8001) | 3-XFDFN |
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Nexperia |
PMH950UPE/SOT8001/DFN0606-3 |
186,192 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 530mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 500mA, 4.5V | 0.95V @ 250µA | 0.5nC @ 4V | ±8V | 36pF @ 10V | - | 370mW (Ta), 2.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN0606-3 (SOT8001) | 3-XFDFN |