트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 159/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS=20 |
46,494 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-2 |
50,580 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH 50V 160MA SOT-523 |
27,348 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 160mA (Ta) | 2.5V, 4V | 4Ohm @ 100mA, 4V | 1V @ 250µA | - | ±12V | 25pF @ 10V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
201,270 |
|
U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 1.2V, 4.5V | 500mOhm @ 500mA, 4.5V | 1V @ 1mA | - | ±10V | 48pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-1 |
80,796 |
|
U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 12V | 1A (Ta) | 1.2V, 4.5V | 370mOhm @ 600mA, 4.5V | 1V @ 1mA | - | ±10V | 50pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
46,128 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | 150mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | +6V, -8V | 270pF @ 10V | - | 600mW (Ta) | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
27,726 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 3.9A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | +6V, -8V | 290pF @ 10V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
|
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|
Micro Commercial Co |
N-CHANNEL MOSFETSOT-323 |
294,924 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 2.1A | 2.5V, 4.5V | 60mOhm @ 3.6A, 4.5V | 1.2V @ 50µA | 10nC @ 4.5V | ±8V | 300pF @ 10V | - | 200mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
|
|
|
Micro Commercial Co |
N-CHANNEL,MOSFETS,SOT-23 PACKAGE |
228,090 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
P-CHANNEL,MOSFETS,SOT23-6L PACKA |
260,400 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 4.1A | 4.5V, 10V | 60mOhm @ 4.1A, 10V | 3V @ 250µA | - | ±20V | 700pF @ 15V | - | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6L | SOT-23-6 |
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Micro Commercial Co |
P-CHANNELMOSFETSOT-323 |
229,710 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.4A | 1.8V, 4.5V | 100mOhm @ 1A, 4.5V | 1.2V @ 250µA | - | ±8V | 640pF @ 8V | - | 290mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
|
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|
Micro Commercial Co |
P-CHANNEL,MOSFETS,SOT-23 PACKAGE |
201,150 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.8A | 2.5V, 4.5V | 120mOhm @ 2.8A, 4.5V | 900mV @ 250µA | 14.5nC @ 4.5V | ±8V | 880pF @ 6V | - | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
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|
Micro Commercial Co |
MOSFET N-CHANNEL 30V 5.8A SOT23 |
24,858 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.8A | 4.5V, 10V | 28mOhm @ 5.8A, 10V | 3V @ 250µA | - | ±20V | 820pF @ 15V | - | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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|
Nexperia |
MOSFET N-CH 20V 1.05A SOT23 |
74,532 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.05A (Ta) | 1.8V, 4.5V | 200mOhm @ 600mA, 4.5V | 570mV @ 1mA | 3.9nC @ 4.5V | ±8V | 152pF @ 16V | - | 417mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-3 |
29,610 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 71mOhm @ 3A, 10V | 2V @ 100µA | 5.9nC @ 10V | +10V, -20V | 280pF @ 15V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Texas Instruments |
MOSFET P-CH 20V 1.7A PICOSTAR |
145,458 |
|
FemtoFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 1.7A (Ta) | 1.8V, 8V | 132mOhm @ 400mA, 8V | 1.2V @ 250µA | 0.91nC @ 4.5V | -12V | 155pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 300MA SOT23 |
75,708 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 300mA (Ta) | 4.5V, 10V | 2.4Ohm @ 300mA, 10V | 2.4V @ 250µA | 1.2nC @ 10V | ±20V | 51.16pF @ 15V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
58,908 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 55mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | +6V, -8V | 630pF @ 10V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
|
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-3 |
54,216 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Rohm Semiconductor |
4V DRIVE NCH MOSFET (AEC-Q101 QU |
24,744 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4V, 10V | 2.4Ohm @ 200mA, 10V | 2.5V @ 1mA | 4.4nC @ 10V | ±20V | 15pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
|
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|
ON Semiconductor |
MOSFET N-CH 30V 0.27A SC70 |
25,038 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 270mA (Ta) | 2.5V, 4V | 1.5Ohm @ 10mA, 4V | 1.5V @ 100µA | 1.3nC @ 5V | ±20V | 33pF @ 5V | - | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE PCH |
29,214 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 10V | 110mOhm @ 2A, 10V | 1.2V @ 1mA | 5.1nC @ 4.5V | ±12V | 210pF @ 10V | - | 1.2W (Ta) | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 50V 0.18A DFN1006-3 |
73,572 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 180mA (Ta) | 2.5V, 5V | 8Ohm @ 100mA, 5V | 2.1V @ 250µA | - | ±20V | 27pF @ 25V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-3 |
53,628 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
ON Semiconductor |
MOSFET N-CH 20V 915MA SOT-416 |
74,982 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 915mA (Ta) | 1.5V, 4.5V | 230mOhm @ 600mA, 4.5V | 1.1V @ 250µA | 1.82nC @ 4.5V | ±6V | 110pF @ 16V | - | 300mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SC-75, SOT-416 |
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|
|
Vishay Siliconix |
MOSFET P-CH 30V POWERPAK 0806 |
53,892 |
|
TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 30V | 500mA (Ta) | 2.5V, 10V | 1.573Ohm @ 200mA, 10V | 1.4V @ 250µA | 2nC @ 10V | ±12V | 33pF @ 15V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 |
|
|
|
Vishay Siliconix |
MOSFET N-CHAN 30-V POWERPAK 0806 |
50,028 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 500mA (Ta) | 1.8V, 4.5V | 1.46Ohm @ 200mA, 4.5V | 1.1V @ 250µA | 0.6nC @ 4.5V | ±8V | 17pF @ 15V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 |
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|
Nexperia |
MOSFET N-CH 60V 3.1A 6TSOP |
28,086 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 3.1A (Ta) | 4.5V, 10V | 123mOhm @ 2.4A, 10V | 2.7V @ 250µA | 7.4nC @ 10V | ±20V | 275pF @ 30V | - | 1.4W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
|
|
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
28,368 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 38V | 2A (Ta) | 4V, 10V | 340mOhm @ 1A, 10V | 2.4V @ 1mA | 2.5nC @ 10V | ±20V | 86pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
24,846 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.5V, 4.5V | 103mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | +6V, -8V | 270pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |